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SI4210DY Spec and Replacement


   Type Designator: SI4210DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0355 Ohm
   Package: SO-8

 SI4210DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4210DY Specs

 ..1. Size:244K  vishay
 si4210dy.pdf pdf_icon

SI4210DY

New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0355 at VGS = 10 V 6.5 TrenchFET Power MOSFET 30 3.7 nC 100 % UIS Tested 0.044 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

 9.1. Size:181K  vishay
 si4214ddy-t1-e3.pdf pdf_icon

SI4210DY

Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.0195 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8.6 APPLICATIONS Notebook System Power Low Current DC/DC D D ... See More ⇒

 9.2. Size:271K  vishay
 si4214dy.pdf pdf_icon

SI4210DY

New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0235 at VGS = 10 V 8.5 TrenchFET Power MOSFET 30 6.7 100 % Rg Tested 0.028 at VGS = 4.5 V 7.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

 9.3. Size:265K  vishay
 si4214ddy.pdf pdf_icon

SI4210DY

Si4214DDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0195 at VGS = 10 V 8.5 100 % Rg and UIS Tested 30 7.1 0.023 at VGS = 4.5 V 8.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Syst... See More ⇒

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Detailed specifications: SI4178DY , SI4186DY , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , SI4202DY , SI4204DY , IRFZ44 , SI4214DDY , SI4228DY , SI4276DY , SI4286DY , SI4288DY , SI4320DY , SI4322DY , SI4324DY .

Keywords - SI4210DY MOSFET specs

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