SI4210DY Datasheet and Replacement. Cross Reference Search

SI4210DY Datasheet (PDF)

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New ProductSi4210DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0355 at VGS = 10 V 6.5 TrenchFET Power MOSFET30 3.7 nC 100 % UIS Tested0.044 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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Si4214DDY-T1-E3Vishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.0195 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V 8.6APPLICATIONS Notebook System Power Low Current DC/DCD D

9.2. Size:271K vishay
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New ProductSi4214DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0235 at VGS = 10 V 8.5 TrenchFET Power MOSFET30 6.7 100 % Rg Tested0.028 at VGS = 4.5 V 7.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATION

9.3. Size:265K vishay
si4214ddy.pdf pdf_icon

Si4214DDYVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFETPower MOSFET0.0195 at VGS = 10 V 8.5 100 % Rg and UIS Tested30 7.10.023 at VGS = 4.5 V 8.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Notebook Syst