SI4210DY Datasheet. Specs and Replacement

Type Designator: SI4210DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0355 Ohm

Package: SO-8

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SI4210DY datasheet

 ..1. Size:244K  vishay
 si4210dy.pdf pdf_icon

SI4210DY

New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0355 at VGS = 10 V 6.5 TrenchFET Power MOSFET 30 3.7 nC 100 % UIS Tested 0.044 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

 9.1. Size:181K  vishay
 si4214ddy-t1-e3.pdf pdf_icon

SI4210DY

Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.0195 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8.6 APPLICATIONS Notebook System Power Low Current DC/DC D D ... See More ⇒

 9.2. Size:271K  vishay
 si4214dy.pdf pdf_icon

SI4210DY

New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0235 at VGS = 10 V 8.5 TrenchFET Power MOSFET 30 6.7 100 % Rg Tested 0.028 at VGS = 4.5 V 7.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

 9.3. Size:265K  vishay
 si4214ddy.pdf pdf_icon

SI4210DY

Si4214DDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0195 at VGS = 10 V 8.5 100 % Rg and UIS Tested 30 7.1 0.023 at VGS = 4.5 V 8.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Syst... See More ⇒

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Detailed specifications: SI4178DY, SI4186DY, SI4190ADY, SI4190DY, SI4196DY, SI4200DY, SI4202DY, SI4204DY, IRFZ44, SI4214DDY, SI4228DY, SI4276DY, SI4286DY, SI4288DY, SI4320DY, SI4322DY, SI4324DY

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