SI4210DY - аналоги, параметры транзистора - Справочник транзисторов

SI4210DY технические параметры

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New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0355 at VGS = 10 V 6.5 TrenchFET Power MOSFET 30 3.7 nC 100 % UIS Tested 0.044 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

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Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.0195 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8.6 APPLICATIONS Notebook System Power Low Current DC/DC D D

9.2. Size:271K vishay
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New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0235 at VGS = 10 V 8.5 TrenchFET Power MOSFET 30 6.7 100 % Rg Tested 0.028 at VGS = 4.5 V 7.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATION

9.3. Size:265K vishay
si4214ddy.pdf pdf_icon

Si4214DDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0195 at VGS = 10 V 8.5 100 % Rg and UIS Tested 30 7.1 0.023 at VGS = 4.5 V 8.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Syst