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SI4276DY Spec and Replacement


   Type Designator: SI4276DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm
   Package: SO-8

 SI4276DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4276DY Specs

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SI4276DY

Si4276DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0153 at VGS = 10 V 8e TrenchFET Power MOSFET Channel 1 30 8.4 0.0184 at VGS = 4.5 V 8e 100 % Rg Tested 100 % UIS Tested 0.0280 at VGS = 10 V 8 Channel 2 30 3.6 Compliant to RoHS ... See More ⇒

Detailed specifications: SI4190DY , SI4196DY , SI4200DY , SI4202DY , SI4204DY , SI4210DY , SI4214DDY , SI4228DY , IRLZ44N , SI4286DY , SI4288DY , SI4320DY , SI4322DY , SI4324DY , SI4336DY , SI4340DDY , SI4346DY .

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