SI4276DY Datasheet. Specs and Replacement

Type Designator: SI4276DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm

Package: SO-8

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SI4276DY datasheet

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SI4276DY

Si4276DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0153 at VGS = 10 V 8e TrenchFET Power MOSFET Channel 1 30 8.4 0.0184 at VGS = 4.5 V 8e 100 % Rg Tested 100 % UIS Tested 0.0280 at VGS = 10 V 8 Channel 2 30 3.6 Compliant to RoHS ... See More ⇒

Detailed specifications: SI4190DY, SI4196DY, SI4200DY, SI4202DY, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, IRLZ44N, SI4286DY, SI4288DY, SI4320DY, SI4322DY, SI4324DY, SI4336DY, SI4340DDY, SI4346DY

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