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SI4286DY Spec and Replacement


   Type Designator: SI4286DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm
   Package: SO-8

 SI4286DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4286DY Specs

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SI4286DY

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SI4286DY

Si4288DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.020 at VGS = 10 V 9.2 TrenchFET Power MOSFET 40 4.9 0.023 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS CCFL Inverter ... See More ⇒

Detailed specifications: SI4196DY , SI4200DY , SI4202DY , SI4204DY , SI4210DY , SI4214DDY , SI4228DY , SI4276DY , IRFB4110 , SI4288DY , SI4320DY , SI4322DY , SI4324DY , SI4336DY , SI4340DDY , SI4346DY , SI4354DY .

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