SI4286DY Datasheet. Specs and Replacement

Type Designator: SI4286DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm

Package: SO-8

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SI4286DY datasheet

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SI4286DY

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SI4286DY

Si4288DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.020 at VGS = 10 V 9.2 TrenchFET Power MOSFET 40 4.9 0.023 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS CCFL Inverter ... See More ⇒

Detailed specifications: SI4196DY, SI4200DY, SI4202DY, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, SI4276DY, IRFB4110, SI4288DY, SI4320DY, SI4322DY, SI4324DY, SI4336DY, SI4340DDY, SI4346DY, SI4354DY

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