SI4286DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4286DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 67 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm
Package: SO-8
SI4286DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4286DY Datasheet (PDF)
si4286dy.pdf
Si4286DYVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0325 at VGS = 10 V 7 TrenchFET Gen III Power MOSFET40 3.3 nC0.040 at VGS = 4.5 V 6.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
si4288dy.pdf
Si4288DYVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.020 at VGS = 10 V 9.2 TrenchFETPower MOSFET40 4.90.023 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS CCFL Inverter
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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