All MOSFET. SI4288DY Datasheet

 

SI4288DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4288DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO-8

 SI4288DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4288DY Datasheet (PDF)

 ..1. Size:256K  vishay
 si4288dy.pdf

SI4288DY SI4288DY

Si4288DYVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.020 at VGS = 10 V 9.2 TrenchFETPower MOSFET40 4.90.023 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS CCFL Inverter

 9.1. Size:256K  vishay
 si4286dy.pdf

SI4288DY SI4288DY

Si4286DYVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0325 at VGS = 10 V 7 TrenchFET Gen III Power MOSFET40 3.3 nC0.040 at VGS = 4.5 V 6.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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History: QS6U22 | SIA415DJ | QM6007S | SI8417DB

 

 
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