SI4288DY Datasheet. Specs and Replacement
Type Designator: SI4288DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
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SI4288DY substitution
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SI4288DY datasheet
si4288dy.pdf
Si4288DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.020 at VGS = 10 V 9.2 TrenchFET Power MOSFET 40 4.9 0.023 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS CCFL Inverter ... See More ⇒
Detailed specifications: SI4200DY, SI4202DY, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, SI4276DY, SI4286DY, IRF640N, SI4320DY, SI4322DY, SI4324DY, SI4336DY, SI4340DDY, SI4346DY, SI4354DY, SI4362BDY
Keywords - SI4288DY MOSFET specs
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