SI4336DY Spec and Replacement
Type Designator: SI4336DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 860 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm
Package: SO-8
SI4336DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4336DY Specs
si4336dy.pdf
Si4336DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Ultra Low On-Resistance Using High VDS (V) rDS(on) ( )ID (A) Qg (Typ) Density TrenchFET Gen II Power Available 0.00325 at VGS = 10 V 25 MOSFET Technology 30 36 RoHS* 0.0042 at VGS = 4.5 V 22 COMPLIANT Qg Optimized 100 % Rg Tested APPLICATIONS Synchronous Buck Low-Side ... See More ⇒
si4334dy.pdf
Si4334DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.0135 at VGS = 10 V 14.8 30 14 nC TrenchFET Power MOSFET 0.016 at VGS = 4.5 V 13.4 100 % Rg and UIS Tested SCHOTTKY AND BODY DIODE PRODUCT APPLICATIONS SUMMARY Notebook... See More ⇒
si4330dy.pdf
Si4330DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0165 at VGS = 10 V 8.7 TrenchFET Power MOSFET 30 0.022 at VGS = 4.5 V 100 % Rg Tested 7.5 APPLICATIONS Notebook - Load Switch - DC/DC Conversion - Auxiliary Voltage SO-8 D1 D2 S 1 1 D 1 ... See More ⇒
Detailed specifications: SI4214DDY , SI4228DY , SI4276DY , SI4286DY , SI4288DY , SI4320DY , SI4322DY , SI4324DY , IRF3710 , SI4340DDY , SI4346DY , SI4354DY , SI4362BDY , SI4368DY , SI4378DY , SI4384DY , SI4386DY .
Keywords - SI4336DY MOSFET specs
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