SI4336DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4336DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 860 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm
Package: SO-8
SI4336DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4336DY Datasheet (PDF)
si4336dy.pdf
Si4336DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Ultra Low On-Resistance Using High VDS (V) rDS(on) ()ID (A) Qg (Typ)Density TrenchFET Gen II Power Available0.00325 at VGS = 10 V 25MOSFET Technology30 36RoHS*0.0042 at VGS = 4.5 V 22COMPLIANT Qg Optimized 100 % Rg TestedAPPLICATIONS Synchronous Buck Low-Side
si4334dy.pdf
Si4334DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0135 at VGS = 10 V 14.830 14 nC TrenchFET Power MOSFET0.016 at VGS = 4.5 V 13.4 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Notebook
si4330dy.pdf
Si4330DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0165 at VGS = 10 V 8.7 TrenchFET Power MOSFET300.022 at VGS = 4.5 V 100 % Rg Tested 7.5APPLICATIONS Notebook- Load Switch- DC/DC Conversion- Auxiliary VoltageSO-8 D1D2S 1 1 D 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SQ9407EY-T1
History: SQ9407EY-T1
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