SI4336DY Datasheet. Specs and Replacement

Type Designator: SI4336DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 860 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm

Package: SO-8

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SI4336DY datasheet

 ..1. Size:97K  vishay
 si4336dy.pdf pdf_icon

SI4336DY

Si4336DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Ultra Low On-Resistance Using High VDS (V) rDS(on) ( )ID (A) Qg (Typ) Density TrenchFET Gen II Power Available 0.00325 at VGS = 10 V 25 MOSFET Technology 30 36 RoHS* 0.0042 at VGS = 4.5 V 22 COMPLIANT Qg Optimized 100 % Rg Tested APPLICATIONS Synchronous Buck Low-Side ... See More ⇒

 9.1. Size:97K  vishay
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SI4336DY

Si4334DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.0135 at VGS = 10 V 14.8 30 14 nC TrenchFET Power MOSFET 0.016 at VGS = 4.5 V 13.4 100 % Rg and UIS Tested SCHOTTKY AND BODY DIODE PRODUCT APPLICATIONS SUMMARY Notebook... See More ⇒

 9.2. Size:227K  vishay
 si4330dy.pdf pdf_icon

SI4336DY

Si4330DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0165 at VGS = 10 V 8.7 TrenchFET Power MOSFET 30 0.022 at VGS = 4.5 V 100 % Rg Tested 7.5 APPLICATIONS Notebook - Load Switch - DC/DC Conversion - Auxiliary Voltage SO-8 D1 D2 S 1 1 D 1 ... See More ⇒

Detailed specifications: SI4214DDY, SI4228DY, SI4276DY, SI4286DY, SI4288DY, SI4320DY, SI4322DY, SI4324DY, IRF3710, SI4340DDY, SI4346DY, SI4354DY, SI4362BDY, SI4368DY, SI4378DY, SI4384DY, SI4386DY

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