SI4336DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4336DY Datasheet (PDF)

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Si4336DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Ultra Low On-Resistance Using High VDS (V) rDS(on) ()ID (A) Qg (Typ)Density TrenchFET Gen II Power Available0.00325 at VGS = 10 V 25MOSFET Technology30 36RoHS*0.0042 at VGS = 4.5 V 22COMPLIANT Qg Optimized 100 % Rg TestedAPPLICATIONS Synchronous Buck Low-Side

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Si4334DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0135 at VGS = 10 V 14.830 14 nC TrenchFET Power MOSFET0.016 at VGS = 4.5 V 13.4 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Notebook

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Si4330DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0165 at VGS = 10 V 8.7 TrenchFET Power MOSFET300.022 at VGS = 4.5 V 100 % Rg Tested 7.5APPLICATIONS Notebook- Load Switch- DC/DC Conversion- Auxiliary VoltageSO-8 D1D2S 1 1 D 1

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