SI4362BDY Spec and Replacement
Type Designator: SI4362BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 19.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 19.8 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: SO-8
SI4362BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4362BDY Specs
si4362bdy.pdf
Si4362BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0046 at VGS = 10 V 19.8 TrenchFET Power MOSFET 30 36 nC 0.0054 at VGS = 4.5 V 18.2 Optimized for "Low Side" Synchronous Rectifier Operation 100 % Rg Tested APPLICATIONS DC/DC ... See More ⇒
si4362dy.pdf
Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for Low Side Synchronous PRODUCT SUMMARY Rectifier Operation D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 30 30 0.0055 @ VGS = 4.5 V 19 D DC/DC Converters D Synchronous Rectifiers SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View O... See More ⇒
si4368dy.pdf
Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0032 at VGS = 10 V 25 30 Extremely Low Qgd for Switching 0.0036 at VGS = 4.5 V 22 Losses Improvement TrenchFET Gen II Power MOSFET 100 % Rg Tested Compliant to RoHS Directive ... See More ⇒
Detailed specifications: SI4288DY , SI4320DY , SI4322DY , SI4324DY , SI4336DY , SI4340DDY , SI4346DY , SI4354DY , 2N7000 , SI4368DY , SI4378DY , SI4384DY , SI4386DY , SI4390DY , SI4396DY , SI4398DY , SI4401BDY .
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