All MOSFET. SI4378DY Datasheet

 

SI4378DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4378DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: SO-8

 SI4378DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4378DY Datasheet (PDF)

 ..1. Size:228K  vishay
 si4378dy.pdf

SI4378DY SI4378DY

Si4378DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0027 at VGS = 4.5 V 25 Ultra Low On-Resistance Using High 200.0042 at VGS = 2.5 V 22Density TrenchFET Gen II Power MOSFET Technology Qg Optimized 100 % Rg TestedAPPLICATIONS Synchronou

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXFH6N90

 

 
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