SI4384DY Datasheet and Replacement
Type Designator: SI4384DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO-8
SI4384DY substitution
SI4384DY Datasheet (PDF)
si4384dy.pdf

Si4384DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = 10 V 15 TrenchFET Gen II Power MOSFETs300.0125 at VGS = 4.5 V 12 PWM Optimized 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- NotebookSO-8- D
si4386dy.pdf

Si4386DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.007 at VGS = 10 V 16 TrenchFET Gen II Power MOSFETs 30 110.0095 at VGS = 4.5 V 13.5 PWM Optimized 100 % Rg TestedAPPLICATIONS DC/DC Conversion for PCSO-8 DSD1
si4388dy.pdf

Si4388DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.016 at VGS = 10 V 10.7Channel-1 30 8 TrenchFET Power MOSFET0.024 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested0.015 at VGS = 10 V 11.3Channel-2 30 190.017 at VGS = 4.
Datasheet: SI4324DY , SI4336DY , SI4340DDY , SI4346DY , SI4354DY , SI4362BDY , SI4368DY , SI4378DY , STP75NF75 , SI4386DY , SI4390DY , SI4396DY , SI4398DY , SI4401BDY , SI4401DDY , SI4401DY , SI4403BDY .
History: IXFR30N110P
Keywords - SI4384DY MOSFET datasheet
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History: IXFR30N110P



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