All MOSFET. SI4384DY Datasheet

 

SI4384DY Datasheet and Replacement


   Type Designator: SI4384DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO-8
 

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SI4384DY Datasheet (PDF)

 ..1. Size:230K  vishay
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SI4384DY

Si4384DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = 10 V 15 TrenchFET Gen II Power MOSFETs300.0125 at VGS = 4.5 V 12 PWM Optimized 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- NotebookSO-8- D

 9.1. Size:234K  vishay
si4386dy.pdf pdf_icon

SI4384DY

Si4386DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.007 at VGS = 10 V 16 TrenchFET Gen II Power MOSFETs 30 110.0095 at VGS = 4.5 V 13.5 PWM Optimized 100 % Rg TestedAPPLICATIONS DC/DC Conversion for PCSO-8 DSD1

 9.2. Size:276K  vishay
si4388dy.pdf pdf_icon

SI4384DY

Si4388DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.016 at VGS = 10 V 10.7Channel-1 30 8 TrenchFET Power MOSFET0.024 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested0.015 at VGS = 10 V 11.3Channel-2 30 190.017 at VGS = 4.

Datasheet: SI4324DY , SI4336DY , SI4340DDY , SI4346DY , SI4354DY , SI4362BDY , SI4368DY , SI4378DY , STP75NF75 , SI4386DY , SI4390DY , SI4396DY , SI4398DY , SI4401BDY , SI4401DDY , SI4401DY , SI4403BDY .

History: STW13NK50Z | PNMIP600V1 | SIHFP048 | 2SK3600-01S

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