SI4384DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4384DY Datasheet (PDF)

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Si4384DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = 10 V 15 TrenchFET Gen II Power MOSFETs300.0125 at VGS = 4.5 V 12 PWM Optimized 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion- NotebookSO-8- D

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Si4386DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.007 at VGS = 10 V 16 TrenchFET Gen II Power MOSFETs 30 110.0095 at VGS = 4.5 V 13.5 PWM Optimized 100 % Rg TestedAPPLICATIONS DC/DC Conversion for PCSO-8 DSD1

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Si4388DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.016 at VGS = 10 V 10.7Channel-1 30 8 TrenchFET Power MOSFET0.024 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested0.015 at VGS = 10 V 11.3Channel-2 30 190.017 at VGS = 4.

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