SI4386DY Spec and Replacement
Type Designator: SI4386DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SO-8
SI4386DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4386DY Specs
si4386dy.pdf
Si4386DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.007 at VGS = 10 V 16 TrenchFET Gen II Power MOSFETs 30 11 0.0095 at VGS = 4.5 V 13.5 PWM Optimized 100 % Rg Tested APPLICATIONS DC/DC Conversion for PC SO-8 D SD 1... See More ⇒
si4384dy.pdf
Si4384DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0085 at VGS = 10 V 15 TrenchFET Gen II Power MOSFETs 30 0.0125 at VGS = 4.5 V 12 PWM Optimized 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook SO-8 - D... See More ⇒
si4388dy.pdf
Si4388DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.016 at VGS = 10 V 10.7 Channel-1 30 8 TrenchFET Power MOSFET 0.024 at VGS = 4.5 V 8.6 100 % Rg and UIS Tested 0.015 at VGS = 10 V 11.3 Channel-2 30 19 0.017 at VGS = 4.... See More ⇒
Detailed specifications: SI4336DY , SI4340DDY , SI4346DY , SI4354DY , SI4362BDY , SI4368DY , SI4378DY , SI4384DY , IRFP250N , SI4390DY , SI4396DY , SI4398DY , SI4401BDY , SI4401DDY , SI4401DY , SI4403BDY , SI4403CDY .
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