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SI4448DY Spec and Replacement


   Type Designator: SI4448DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 2775 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: SO-8

 SI4448DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4448DY Specs

 ..1. Size:235K  vishay
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SI4448DY

Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0017 at VGS = 4.5 V 50 TrenchFET Power MOSFET 0.002 at VGS = 2.5 V 12 46 56 nC 100 % Rg Tested 0.0027 at VGS = 1.8 V 40 100 % UIS Tested APPLICATIONS POL DC/DC SO-8 D ... See More ⇒

 9.1. Size:103K  vishay
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SI4448DY

Si4447DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition TrenchFET Power MOSFET 0.054 at VGS = - 10 V - 4.5 - 40 9 100 % Rg Tested 0.072 at VGS = - 4.5 V - 3.9 100 % UIS Tested APPLICATIONS CCFL Inverter SO-8 S S 1 8 D S D 2 7 G S ... See More ⇒

 9.2. Size:266K  vishay
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SI4448DY

New Product Si4447ADY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.045 at VGS = - 10 V - 7.2 TrenchFET Power MOSFET - 40 11.8 nC 0.062 at VGS = - 4.5 V - 6.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPL... See More ⇒

 9.3. Size:221K  vishay
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SI4448DY

Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0045 at VGS = 10 V 22 TrenchFET Power MOSFETs 2.5 V Rated 0.005 at VGS = 4.5 V 30 19 100 % Rg Tested 0.0075 at VGS = 2.5 V 17 D SO-8 S 1 8 D 2 7 S D G 3 6 S D G 4 5 D Top View S ... See More ⇒

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Detailed specifications: SI4431CDY , SI4434DY , SI4435DDY , SI4435DYPBF , SI4436DY , SI4438DY , SI4446DY , SI4447ADY , 2SK3568 , SI4451DY , SI4453DY , SI4455DY , SI4456DY , SI4459ADY , SI4462DY , SI4463CDY , SI4464DY .

Keywords - SI4448DY MOSFET specs

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