SI4472DY Spec and Replacement
Type Designator: SI4472DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
SI4472DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4472DY Specs
si4472dy.pdf
Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 7.7 Extremely Low Qgd for Switching Losses 150 23 nC 0.047 at VGS = 8 V 7.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒
si4473dy.pdf
Si4473DY Vishay Siliconix P-Channel 14-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) APPLICATION 0.011 @ VGS = -4.5 V -13 -14 -14 D Battery Switch for Portable Equipment 0.016 @ VGS = -2.5 V -11 SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4473DY Si4473DY-T1 (with Tape and Reel) P-Channel MO... See More ⇒
si4470ey.pdf
Si4470EY Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.011 at VGS = 10 V 12.7 60 TrenchFET Power MOSFETs 0.013 at VGS = 6.0 V 11.7 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO... See More ⇒
Detailed specifications: SI4456DY , SI4459ADY , SI4462DY , SI4463CDY , SI4464DY , SI4465ADY , SI4466DY , SI4470EY , 2N60 , SI4477DY , SI4482DY , SI4483ADY , SI4483EDY , SI4484EY , SI4485DY , SI4486EY , SI4487DY .
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