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SI4500BDY Spec and Replacement


   Type Designator: SI4500BDY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO-8

 SI4500BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4500BDY Specs

 ..1. Size:275K  vishay
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SI4500BDY

Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 4.5 V 9.1 TrenchFET Power MOSFET N-Channel 20 0.030 at VGS = 2.5 V 7.5 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 5.3 P-Channel - 20 0.100 a... See More ⇒

 8.1. Size:116K  vishay
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SI4500BDY

Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "7.0 N-Channel 20 N-Channel 20 0.040 @ VGS = 2.5 V "6.0 0.065 @ VGS = 4.5 V "4.5 P-Channel 20 P-Channel 20 0.100 @ VGS = 2.5 V "3.5 S2 SO-8 G2 S1 1 D 8 G1 2 D 7 D S2 3 D 6 G2 4 D 5 G1 Top View S1 ABSOLUT... See More ⇒

 9.1. Size:273K  vishay
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SI4500BDY

Si4501BDY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET N-Channel 30 7.9 0.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested 0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95... See More ⇒

 9.2. Size:271K  vishay
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SI4500BDY

Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFET N-Channel 30 0.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC 0.042 at VGS = - 4.5 V - 5.7 P-Channel - 8 0.060 at VGS = - 2.5 ... See More ⇒

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Detailed specifications: SI4484EY , SI4485DY , SI4486EY , SI4487DY , SI4488DY , SI4491EDY , SI4493DY , SI4497DY , IRF9640 , SI4501BDY , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY .

Keywords - SI4500BDY MOSFET specs

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