SI4500BDY Datasheet and Replacement. Cross Reference Search

SI4500BDY Datasheet (PDF)

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Si4500BDYVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 4.5 V 9.1 TrenchFET Power MOSFETN-Channel 200.030 at VGS = 2.5 V 7.5 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 5.3P-Channel - 200.100 a

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Si4500DYNew ProductVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V "7.0N-Channel 20N-Channel 200.040 @ VGS = 2.5 V "6.00.065 @ VGS = 4.5 V "4.5P-Channel 20P-Channel 200.100 @ VGS = 2.5 V "3.5S2SO-8G2S1 1 D8G1 2 D7DS2 3 D6G2 4 D5G1Top ViewS1ABSOLUT

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Si4501BDYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFETN-Channel 30 7.90.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95

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Si4501ADYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.7P-Channel - 80.060 at VGS = - 2.5