Справочник MOSFET. SI4500BDY

 

SI4500BDY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4500BDY
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SI4500BDY

 

 

SI4500BDY Datasheet (PDF)

 ..1. Size:275K  vishay
 si4500bdy.pdf

SI4500BDY SI4500BDY

Si4500BDYVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 4.5 V 9.1 TrenchFET Power MOSFETN-Channel 200.030 at VGS = 2.5 V 7.5 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 5.3P-Channel - 200.100 a

 8.1. Size:116K  vishay
 si4500dy.pdf

SI4500BDY SI4500BDY

Si4500DYNew ProductVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V "7.0N-Channel 20N-Channel 200.040 @ VGS = 2.5 V "6.00.065 @ VGS = 4.5 V "4.5P-Channel 20P-Channel 200.100 @ VGS = 2.5 V "3.5S2SO-8G2S1 1 D8G1 2 D7DS2 3 D6G2 4 D5G1Top ViewS1ABSOLUT

 9.1. Size:273K  vishay
 si4501bdy.pdf

SI4500BDY SI4500BDY

Si4501BDYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFETN-Channel 30 7.90.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95

 9.2. Size:271K  vishay
 si4501ad.pdf

SI4500BDY SI4500BDY

Si4501ADYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.7P-Channel - 80.060 at VGS = - 2.5

 9.3. Size:271K  vishay
 si4505dy.pdf

SI4500BDY SI4500BDY

Si4505DYVishay SiliconixN- and P-Channel MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 7.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.0P-Channel - 80.060 at VGS = - 2.5 V - 4.0APPLICAT

 9.4. Size:127K  vishay
 si4501dy.pdf

SI4500BDY SI4500BDY

Si4501DYVishay SiliconixComplementary MOSFET (N- and P-Channel)FEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)0.018 at VGS = 10 V 9N-Channel 300.027 at VGS = 4.5 V 7.40.042 at VGS = - 4.5 V 6.2P-Channel - 80.060 at VGS = - 2.5 V 5.2S2SO-8 S D 1 1 8 G 1 2 D 7 G2S D 2 3 6 G 2 4 D 5 D

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