All MOSFET. SI4501BDY Datasheet

 

SI4501BDY Datasheet and Replacement


   Type Designator: SI4501BDY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SO-8
 

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SI4501BDY Datasheet (PDF)

 ..1. Size:273K  vishay
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SI4501BDY

Si4501BDYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFETN-Channel 30 7.90.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95

 8.1. Size:271K  vishay
 si4501ad.pdf pdf_icon

SI4501BDY

Si4501ADYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.7P-Channel - 80.060 at VGS = - 2.5

 8.2. Size:127K  vishay
 si4501dy.pdf pdf_icon

SI4501BDY

Si4501DYVishay SiliconixComplementary MOSFET (N- and P-Channel)FEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)0.018 at VGS = 10 V 9N-Channel 300.027 at VGS = 4.5 V 7.40.042 at VGS = - 4.5 V 6.2P-Channel - 80.060 at VGS = - 2.5 V 5.2S2SO-8 S D 1 1 8 G 1 2 D 7 G2S D 2 3 6 G 2 4 D 5 D

 9.1. Size:271K  vishay
 si4505dy.pdf pdf_icon

SI4501BDY

Si4505DYVishay SiliconixN- and P-Channel MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 7.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.0P-Channel - 80.060 at VGS = - 2.5 V - 4.0APPLICAT

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Datasheet: SI4485DY , SI4486EY , SI4487DY , SI4488DY , SI4491EDY , SI4493DY , SI4497DY , SI4500BDY , 8N60 , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY , SI4618DY .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - SI4501BDY MOSFET datasheet

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