SI4501BDY Datasheet. Specs and Replacement

Type Designator: SI4501BDY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SO-8

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SI4501BDY datasheet

 ..1. Size:273K  vishay
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SI4501BDY

Si4501BDY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET N-Channel 30 7.9 0.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested 0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95... See More ⇒

 8.1. Size:271K  vishay
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SI4501BDY

Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFET N-Channel 30 0.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC 0.042 at VGS = - 4.5 V - 5.7 P-Channel - 8 0.060 at VGS = - 2.5 ... See More ⇒

 8.2. Size:127K  vishay
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SI4501BDY

Si4501DY Vishay Siliconix Complementary MOSFET (N- and P-Channel) FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A) 0.018 at VGS = 10 V 9 N-Channel 30 0.027 at VGS = 4.5 V 7.4 0.042 at VGS = - 4.5 V 6.2 P-Channel - 8 0.060 at VGS = - 2.5 V 5.2 S2 SO-8 S D 1 1 8 G 1 2 D 7 G2 S D 2 3 6 G 2 4 D 5 D ... See More ⇒

 9.1. Size:271K  vishay
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SI4501BDY

Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = 10 V 7.8 TrenchFET Power MOSFET N-Channel 30 0.027 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/EC 0.042 at VGS = - 4.5 V - 5.0 P-Channel - 8 0.060 at VGS = - 2.5 V - 4.0 APPLICAT... See More ⇒

Detailed specifications: SI4485DY, SI4486EY, SI4487DY, SI4488DY, SI4491EDY, SI4493DY, SI4497DY, SI4500BDY, IRFB7545, SI4511DY, SI4532CDY, SI4554DY, SI4559ADY, SI4564DY, SI4590DY, SI4599DY, SI4618DY

Keywords - SI4501BDY MOSFET specs

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