SI4501BDY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4501BDY
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
SO-8
SI4501BDY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4501BDY
Datasheet (PDF)
..1. Size:273K vishay
si4501bdy.pdf 
Si4501BDYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFETN-Channel 30 7.90.020 at VGS = 4.5 V 11 100 % Rg and UIS Tested0.027 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95
8.1. Size:271K vishay
si4501ad.pdf
Si4501ADYVishay SiliconixComplementary (N- and P-Channel) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 8.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 7.0 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.7P-Channel - 80.060 at VGS = - 2.5
8.2. Size:127K vishay
si4501dy.pdf
Si4501DYVishay SiliconixComplementary MOSFET (N- and P-Channel)FEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)0.018 at VGS = 10 V 9N-Channel 300.027 at VGS = 4.5 V 7.40.042 at VGS = - 4.5 V 6.2P-Channel - 80.060 at VGS = - 2.5 V 5.2S2SO-8 S D 1 1 8 G 1 2 D 7 G2S D 2 3 6 G 2 4 D 5 D
9.1. Size:271K vishay
si4505dy.pdf
Si4505DYVishay SiliconixN- and P-Channel MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = 10 V 7.8 TrenchFET Power MOSFETN-Channel 300.027 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/EC0.042 at VGS = - 4.5 V - 5.0P-Channel - 80.060 at VGS = - 2.5 V - 4.0APPLICAT
9.2. Size:275K vishay
si4500bdy.pdf
Si4500BDYVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 4.5 V 9.1 TrenchFET Power MOSFETN-Channel 200.030 at VGS = 2.5 V 7.5 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 5.3P-Channel - 200.100 a
9.3. Size:116K vishay
si4500dy.pdf
Si4500DYNew ProductVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V "7.0N-Channel 20N-Channel 200.040 @ VGS = 2.5 V "6.00.065 @ VGS = 4.5 V "4.5P-Channel 20P-Channel 200.100 @ VGS = 2.5 V "3.5S2SO-8G2S1 1 D8G1 2 D7DS2 3 D6G2 4 D5G1Top ViewS1ABSOLUT
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