All MOSFET. SI4511DY Datasheet

 

SI4511DY Datasheet and Replacement


   Type Designator: SI4511DY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SO-8
 

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SI4511DY Datasheet (PDF)

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SI4511DY

Si4511DYVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0145 at VGS = 10 V 9.6 TrenchFET Power MOSFETN-Channel 200.017 at VGS = 4.5 V Compliant to RoHS directive 2002/95/EC8.60.033 at VGS = - 4.5 V - 6.2P-Channel - 20 APPLICATIONS0.050 at VGS =

Datasheet: SI4486EY , SI4487DY , SI4488DY , SI4491EDY , SI4493DY , SI4497DY , SI4500BDY , SI4501BDY , EMB04N03H , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY , SI4618DY , SI4620DY .

History: NVMFD020N06C | AFP8452 | IPD90N04S3-H4

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