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SI4511DY Spec and Replacement


   Type Designator: SI4511DY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SO-8

 SI4511DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4511DY Specs

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SI4511DY

Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0145 at VGS = 10 V 9.6 TrenchFET Power MOSFET N-Channel 20 0.017 at VGS = 4.5 V Compliant to RoHS directive 2002/95/EC 8.6 0.033 at VGS = - 4.5 V - 6.2 P-Channel - 20 APPLICATIONS 0.050 at VGS = ... See More ⇒

Detailed specifications: SI4486EY , SI4487DY , SI4488DY , SI4491EDY , SI4493DY , SI4497DY , SI4500BDY , SI4501BDY , AON7403 , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY , SI4618DY , SI4620DY .

History: IXFN32N100P | SI4501BDY

Keywords - SI4511DY MOSFET specs

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