SI4511DY Datasheet. Specs and Replacement

Type Designator: SI4511DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: SO-8

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SI4511DY datasheet

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SI4511DY

Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0145 at VGS = 10 V 9.6 TrenchFET Power MOSFET N-Channel 20 0.017 at VGS = 4.5 V Compliant to RoHS directive 2002/95/EC 8.6 0.033 at VGS = - 4.5 V - 6.2 P-Channel - 20 APPLICATIONS 0.050 at VGS = ... See More ⇒

Detailed specifications: SI4486EY, SI4487DY, SI4488DY, SI4491EDY, SI4493DY, SI4497DY, SI4500BDY, SI4501BDY, AON7403, SI4532CDY, SI4554DY, SI4559ADY, SI4564DY, SI4590DY, SI4599DY, SI4618DY, SI4620DY

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