SI4618DY Datasheet and Replacement
Type Designator: SI4618DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SO-8
SI4618DY substitution
SI4618DY Datasheet (PDF)
si4618dy.pdf

Si4618DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 30 12.50.0195 at VGS = 4.5 V 7.5 100 % Rg and UIS Tested0.010 at VGS = 10 V 15.2 Compliant to RoHS Directi
si4614.pdf

SOP-8 Plastic-Encapsulate MOSFETS SI4614N and P-Channel Enhancement Mode Power MOSFET Description The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagr
Datasheet: SI4501BDY , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY , AO4468 , SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY .
History: CHM6601JGP | AON6242 | ME7890ED-G | KRLML6401 | ELM5B801QA | AON6266 | FDD8580-6
Keywords - SI4618DY MOSFET datasheet
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History: CHM6601JGP | AON6242 | ME7890ED-G | KRLML6401 | ELM5B801QA | AON6266 | FDD8580-6



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