SI4618DY Spec and Replacement
Type Designator: SI4618DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SO-8
SI4618DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4618DY Specs
si4618dy.pdf
Si4618DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 8.0 TrenchFET Power MOSFET Channel-1 30 12.5 0.0195 at VGS = 4.5 V 7.5 100 % Rg and UIS Tested 0.010 at VGS = 10 V 15.2 Compliant to RoHS Directi... See More ⇒
si4614.pdf
SOP-8 Plastic-Encapsulate MOSFETS SI4614 N and P-Channel Enhancement Mode Power MOSFET Description The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagr... See More ⇒
Detailed specifications: SI4501BDY , SI4511DY , SI4532CDY , SI4554DY , SI4559ADY , SI4564DY , SI4590DY , SI4599DY , 60N06 , SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY .
History: 3N150S
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