SI4628DY Datasheet. Specs and Replacement

Type Designator: SI4628DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: SO-8

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SI4628DY datasheet

 ..1. Size:255K  vishay
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SI4628DY

Si4628DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0030 at VGS = 10 V 38 SkyFET Monolithic TrenchFET Gen III 30 27.5 nC 0.0038 at VGS = 4.5 V 33 Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS... See More ⇒

 9.1. Size:240K  vishay
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SI4628DY

New Product Si4626ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 26.3 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-... See More ⇒

 9.2. Size:237K  vishay
si4626ad.pdf pdf_icon

SI4628DY

New Product Si4626ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 26.3 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-... See More ⇒

 9.3. Size:291K  vishay
si4622dy.pdf pdf_icon

SI4628DY

New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0160 at VGS = 10 V 8.0e Channel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0e Power MOSFET and Schottky Diode 0.0264 at VGS = 10 V 8.0e... See More ⇒

Detailed specifications: SI4559ADY, SI4564DY, SI4590DY, SI4599DY, SI4618DY, SI4620DY, SI4622DY, SI4626ADY, IRFZ44N, SI4630DY, SI4632DY, SI4636DY, SI4638DY, SI4642DY, SI4646DY, SI4654DY, SI4660DY

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