SI4628DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4628DY
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 25.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 38 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 810 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
Тип корпуса: SO-8
SI4628DY Datasheet (PDF)
si4628dy.pdf
Si4628DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0030 at VGS = 10 V 38 SkyFET Monolithic TrenchFET Gen III30 27.5 nC0.0038 at VGS = 4.5 V 33Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS
si4626ady.pdf
New ProductSi4626ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V 26.3APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-
si4626ad.pdf
New ProductSi4626ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V 26.3APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-
si4622dy.pdf
New ProductSi4622DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0160 at VGS = 10 V 8.0eChannel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0ePower MOSFET and Schottky Diode0.0264 at VGS = 10 V 8.0e
si4626dy.pdf
New ProductSi4626DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg and UIS TestedRoHS 0.0036 at VGS = 10 V 30COMPLIANT 34 nC30APPLICATIONS0.0048 at VGS = 4.5 V 26.3 Low-Side DC/DC Conversion- Notebook- GamingSO-8 DS D 1 8 S D 2 7 S D 3 6
si4620dy.pdf
Si4620DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = 10 V 7.430 4.2 nC LITTLE FOOT Plus Power MOSFET0.052 at VGS = 4.5 V 6.1 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY APPLICATIONS
si4621dy.pdf
Si4621DYVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.054 at VGS = - 10 V 6.2 LITTLE FOOT Plus Schottky- 20 4.5 nC0.094 at VGS = - 4.5 V 4.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSCHOTTKY PRODUCT SUMMARY P
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