All MOSFET. SI4630DY Datasheet

 

SI4630DY Datasheet and Replacement


   Type Designator: SI4630DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 997 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: SO-8
 

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SI4630DY Datasheet (PDF)

 ..1. Size:236K  vishay
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SI4630DY

Si4630DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ)Available0.0027 at VGS = 10 V 36 TrenchFET Power MOSFET25 49 nC 100 % Rg Tested0.0032 at VGS = 4.5 V 29APPLICATIONS Synchronous Buck - Low Side- Notebook- Server- Workstation Synchrono

 9.1. Size:89K  vishay
si4636dy.pdf pdf_icon

SI4630DY

Si4636DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0085 at VGS = 10 V 1730 18.8 nC TrenchFET Power MOSFET0.0105 at VGS = 4.5 V 15.6 100 % Rg and UIS TestedSCHOTTKY AND BODY DIODE PRODUCT APPLICATIONSSUMMARY Noteboo

 9.2. Size:244K  vishay
si4632dy.pdf pdf_icon

SI4630DY

Si4632DYVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0027 at VGS = 10 V 36 Low Qgd 25 49 nC0.0033 at VGS = 4.5 V 29 100 % Rg Tested UIS and Capacitance Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck -

 9.3. Size:103K  vishay
si4638dy.pdf pdf_icon

SI4630DY

New ProductSi4638DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0065 at VGS = 10 V 22.430 27.5 nC SkyFET Monolithic TrenchFET Power 0.008 at VGS = 4.5 V 20.2MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested

Datasheet: SI4564DY , SI4590DY , SI4599DY , SI4618DY , SI4620DY , SI4622DY , SI4626ADY , SI4628DY , IRF3205 , SI4632DY , SI4636DY , SI4638DY , SI4642DY , SI4646DY , SI4654DY , SI4660DY , SI4666DY .

History: APT3580BN | RSR030N06

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