SI4630DY Datasheet. Specs and Replacement

Type Designator: SI4630DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 122 nS

Cossⓘ - Output Capacitance: 997 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: SO-8

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SI4630DY datasheet

 ..1. Size:236K  vishay
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SI4630DY

Si4630DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ) Available 0.0027 at VGS = 10 V 36 TrenchFET Power MOSFET 25 49 nC 100 % Rg Tested 0.0032 at VGS = 4.5 V 29 APPLICATIONS Synchronous Buck - Low Side - Notebook - Server - Workstation Synchrono... See More ⇒

 9.1. Size:89K  vishay
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SI4630DY

Si4636DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.0085 at VGS = 10 V 17 30 18.8 nC TrenchFET Power MOSFET 0.0105 at VGS = 4.5 V 15.6 100 % Rg and UIS Tested SCHOTTKY AND BODY DIODE PRODUCT APPLICATIONS SUMMARY Noteboo... See More ⇒

 9.2. Size:244K  vishay
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SI4630DY

Si4632DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0027 at VGS = 10 V 36 Low Qgd 25 49 nC 0.0033 at VGS = 4.5 V 29 100 % Rg Tested UIS and Capacitance Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck -... See More ⇒

 9.3. Size:103K  vishay
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SI4630DY

New Product Si4638DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0065 at VGS = 10 V 22.4 30 27.5 nC SkyFET Monolithic TrenchFET Power 0.008 at VGS = 4.5 V 20.2 MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested ... See More ⇒

Detailed specifications: SI4564DY, SI4590DY, SI4599DY, SI4618DY, SI4620DY, SI4622DY, SI4626ADY, SI4628DY, IRF3205, SI4632DY, SI4636DY, SI4638DY, SI4642DY, SI4646DY, SI4654DY, SI4660DY, SI4666DY

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