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SI4642DY Spec and Replacement


   Type Designator: SI4642DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 22.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00375 Ohm
   Package: SO-8

 SI4642DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4642DY Specs

 ..1. Size:237K  vishay
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SI4642DY

Si4642DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.00375 at VGS = 10 V 34 30 35.7 nC SkyFET Monolithic TrenchFET Power 0.0047 at VGS = 4.5 V 30 MOSFET and Schottky Diode 100 % Rg and UIS Tested APPLICATIONS Notebook CP... See More ⇒

 9.1. Size:273K  vishay
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SI4642DY

New Product Si4646DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0115 at VGS = 10 V 12e SkyFET Monolithic TrenchFET Power 30 13.7 nC 0.0145 at VGS = 4.5 V 12e MOSFET and Schottky Diode 100 % Rg and UIS Tested Compl... See More ⇒

Detailed specifications: SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY , IRF540N , SI4646DY , SI4654DY , SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY .

History: SI4636DY | IXFN38N80Q2 | SI4654DY | IXFN44N100P

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