All MOSFET. SI4642DY Datasheet

 

SI4642DY Datasheet and Replacement


   Type Designator: SI4642DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00375 Ohm
   Package: SO-8
 

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SI4642DY Datasheet (PDF)

 ..1. Size:237K  vishay
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SI4642DY

Si4642DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.00375 at VGS = 10 V 3430 35.7 nC SkyFET Monolithic TrenchFET Power 0.0047 at VGS = 4.5 V 30MOSFET and Schottky Diode 100 % Rg and UIS TestedAPPLICATIONS Notebook CP

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SI4642DY

New ProductSi4646DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0115 at VGS = 10 V 12e SkyFET Monolithic TrenchFET Power 30 13.7 nC0.0145 at VGS = 4.5 V 12e MOSFET and Schottky Diode 100 % Rg and UIS Tested Compl

Datasheet: SI4620DY , SI4622DY , SI4626ADY , SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY , IRF540N , SI4646DY , SI4654DY , SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY .

History: IRCZ34 | BLS6G2731-6G | TPC8013-H | BLS6G2731-120 | AM2336N-T1 | WMB042DN03LG2 | BLS6G2731S-120

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