SI4670DY Datasheet. Specs and Replacement
Type Designator: SI4670DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SO-8
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SI4670DY datasheet
si4670dy.pdf
Si4670DY Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.023 at VGS = 10 V 8.0 TrenchFET Power MOSFET Channel-1 25 5.5 0.028 at VGS = 4.5 V 8.0 PWM Optimized 0.023 at VGS = 10 V 8.0 Channel-2 25 5.5 Compliant to Ro... See More ⇒
Detailed specifications: SI4636DY, SI4638DY, SI4642DY, SI4646DY, SI4654DY, SI4660DY, SI4666DY, SI4668DY, IRF1404, SI4682DY, SI4684DY, SI4686DY, SI4688DY, SI4712DY, SI4752DY, SI4774DY, SI4776DY
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