All MOSFET. SI4670DY Datasheet

 

SI4670DY Datasheet and Replacement


   Type Designator: SI4670DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8
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SI4670DY Datasheet (PDF)

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SI4670DY

Si4670DYVishay SiliconixDual N-Channel 25-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.023 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 25 5.50.028 at VGS = 4.5 V 8.0 PWM Optimized0.023 at VGS = 10 V 8.0Channel-2 25 5.5 Compliant to Ro

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AP73T02GH-HF | OSG60R099HSZF | IRF820A | SM2206NSQG | AP2732GK | KTJ6164S | BUK9213-30A

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