All MOSFET. SI4670DY Datasheet

 

SI4670DY Datasheet and Replacement


   Type Designator: SI4670DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8
 

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SI4670DY Datasheet (PDF)

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SI4670DY

Si4670DYVishay SiliconixDual N-Channel 25-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.023 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 25 5.50.028 at VGS = 4.5 V 8.0 PWM Optimized0.023 at VGS = 10 V 8.0Channel-2 25 5.5 Compliant to Ro

Datasheet: SI4636DY , SI4638DY , SI4642DY , SI4646DY , SI4654DY , SI4660DY , SI4666DY , SI4668DY , IRF1404 , SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY , SI4752DY , SI4774DY , SI4776DY .

History: RQK0303MGDQA | SM2413PSAN | IPD105N04LG | IPB60R380C6 | AON3402 | BUK9529-100B | PA002FMG

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