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SI4684DY Spec and Replacement


   Type Designator: SI4684DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: SO-8

 SI4684DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4684DY Specs

 ..1. Size:94K  vishay
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SI4684DY

Si4684DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0094 at VGS = 10 V Extremely Low Qgd WFET Technology 16 30 14 nC for Low Switching Losses 0.0115 at VGS = 4.5 V 14 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Direc... See More ⇒

 9.1. Size:246K  vishay
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SI4684DY

Si4682DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0094 at VGS = 10 V 16 30 11 nC Extremely Low Qgd for Low Switching Losses 0.0135 at VGS = 4.5 V 13 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLI... See More ⇒

 9.2. Size:243K  vishay
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SI4684DY

New Product Si4688DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = 10 V 12 TrenchFET Power MOSFET 30 0.0145 at VGS = 4.5 V 9.8 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook PC - Core D - System Power SO-8 S D 1 8 S... See More ⇒

 9.3. Size:235K  vishay
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SI4684DY

Si4686DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0095 at VGS = 10 V 18.2 Extremely Low Qgd WFET Technology 30 9.2 nC 0.014 at VGS = 4.5 V 15 for Low Switching Losses TrenchFET Power MOSFETs 100 % Rg Tested SO-8 APPLICATIONS D ... See More ⇒

Detailed specifications: SI4642DY , SI4646DY , SI4654DY , SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , IRFB4110 , SI4686DY , SI4688DY , SI4712DY , SI4752DY , SI4774DY , SI4776DY , SI4778DY , SI4800 .

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