SI4712DY Datasheet. Specs and Replacement
Type Designator: SI4712DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SO-8
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SI4712DY substitution
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SI4712DY datasheet
si4712dy.pdf
New Product Si4712DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.013 at VGS = 10 V 14.6 30 8.3 nC SkyFET Monolithic TrenchFET Power 0.0165 at VGS = 4.5 V 12.9 MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested ... See More ⇒
si4710cy.pdf
Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Solution for Bi-Directional Blocking D Level-Shifted Gate Drive with Internal MOSFET Bi-Directional Conduction Switch D Ultra Low Power Consumption in Off State D 6- to 30-V Operation (Leakage Current Only) D Ground Referenced Logic Level Inputs D Logic Supply Voltage is Not Required D Integrated Low rDS(on) MO... See More ⇒
Detailed specifications: SI4660DY, SI4666DY, SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY, SI4688DY, AO3400, SI4752DY, SI4774DY, SI4776DY, SI4778DY, SI4800, SI4800BDY, SI4810BDY, SI4812BDY
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