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SI4712DY Spec and Replacement


   Type Designator: SI4712DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8

 SI4712DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4712DY Specs

 ..1. Size:243K  vishay
 si4712dy.pdf pdf_icon

SI4712DY

New Product Si4712DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.013 at VGS = 10 V 14.6 30 8.3 nC SkyFET Monolithic TrenchFET Power 0.0165 at VGS = 4.5 V 12.9 MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested ... See More ⇒

 9.1. Size:81K  vishay
 si4710cy.pdf pdf_icon

SI4712DY

Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Solution for Bi-Directional Blocking D Level-Shifted Gate Drive with Internal MOSFET Bi-Directional Conduction Switch D Ultra Low Power Consumption in Off State D 6- to 30-V Operation (Leakage Current Only) D Ground Referenced Logic Level Inputs D Logic Supply Voltage is Not Required D Integrated Low rDS(on) MO... See More ⇒

Detailed specifications: SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , AO3400 , SI4752DY , SI4774DY , SI4776DY , SI4778DY , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY .

History: BL3N90E-P

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