All MOSFET. SI4712DY Datasheet

 

SI4712DY Datasheet and Replacement


   Type Designator: SI4712DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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SI4712DY Datasheet (PDF)

 ..1. Size:243K  vishay
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SI4712DY

New ProductSi4712DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.013 at VGS = 10 V 14.630 8.3 nC SkyFET Monolithic TrenchFET Power 0.0165 at VGS = 4.5 V 12.9MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested

 9.1. Size:81K  vishay
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SI4712DY

Si4710CYNew ProductVishay SiliconixBattery Disconnect SwitchFEATURESD Solution for Bi-Directional Blocking D Level-Shifted Gate Drive with Internal MOSFETBi-Directional Conduction SwitchD Ultra Low Power Consumption in Off StateD 6- to 30-V Operation (Leakage Current Only)D Ground Referenced Logic Level Inputs D Logic Supply Voltage is Not RequiredD Integrated Low rDS(on) MO

Datasheet: SI4660DY , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , IRF3710 , SI4752DY , SI4774DY , SI4776DY , SI4778DY , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY .

History: RFL1N20 | 2SK2715 | IRF7495PBF | ME2302 | MTM23227 | CEP02N65G | 2SK819

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