All MOSFET. SI4752DY Datasheet

 

SI4752DY Datasheet and Replacement


   Type Designator: SI4752DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO-8
 

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SI4752DY Datasheet (PDF)

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SI4752DY

New ProductSi4752DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0055 at VGS = 10 V 25 SkyFETMonolithic TrenchFETPower 30 13.8 nC0.0076 at VGS = 4.5 V 21MOSFET and Schottky Diode 100 % Rg and UIS Tested Com

Datasheet: SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY , AON6414A , SI4774DY , SI4776DY , SI4778DY , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY , SI4816BDY .

History: STL4N10F7 | RTR030N05 | BSB044N08NN3G | SWT69N65K2 | IXTY1R4N100P | BUK9Y07-30B | IRFS531

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