SI4752DY Spec and Replacement
Type Designator: SI4752DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SO-8
SI4752DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4752DY Specs
si4752dy.pdf
New Product Si4752DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0055 at VGS = 10 V 25 SkyFET Monolithic TrenchFET Power 30 13.8 nC 0.0076 at VGS = 4.5 V 21 MOSFET and Schottky Diode 100 % Rg and UIS Tested Com... See More ⇒
Detailed specifications: SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY , IRFB4227 , SI4774DY , SI4776DY , SI4778DY , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY , SI4816BDY .
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