SI4752DY Datasheet. Specs and Replacement
Type Designator: SI4752DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SO-8
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SI4752DY substitution
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SI4752DY datasheet
si4752dy.pdf
New Product Si4752DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0055 at VGS = 10 V 25 SkyFET Monolithic TrenchFET Power 30 13.8 nC 0.0076 at VGS = 4.5 V 21 MOSFET and Schottky Diode 100 % Rg and UIS Tested Com... See More ⇒
Detailed specifications: SI4666DY, SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY, SI4688DY, SI4712DY, IRFB4227, SI4774DY, SI4776DY, SI4778DY, SI4800, SI4800BDY, SI4810BDY, SI4812BDY, SI4816BDY
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