IRFS241 Datasheet and Replacement
Type Designator: IRFS241
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 64(max) nC
tr ⓘ - Rise Time: 60(max) nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO3PF
IRFS241 substitution
IRFS241 Datasheet (PDF)
irfs240b.pdf

November 2001IRFS240B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to Fast
irfs244b.pdf

November 2001IRFS244B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.2A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to Fast
Datasheet: IRFS152 , IRFS153 , IRFS230 , IRFS231 , IRFS232 , IRFS233 , IRFS240 , IRFS240A , 60N06 , IRFS242 , IRFS243 , IRFS244A , IRFS250 , IRFS250A , IRFS251 , IRFS252 , IRFS253 .
Keywords - IRFS241 MOSFET datasheet
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