November 2001IRFS240B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to Fast

November 2001IRFS244B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.2A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to Fast

IRFS240AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 12.8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

IRFS244FEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10.2 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 250V Lower RDS(ON): 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact