All MOSFET. SI4909DY Datasheet

 

SI4909DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4909DY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SO-8

 SI4909DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4909DY Datasheet (PDF)

 ..1. Size:267K  vishay
si4909dy.pdf

SI4909DY SI4909DY

New ProductSi4909DYVishay SiliconixDual P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.027 at VGS = - 10 V - 8 TrenchFET Power MOSFET- 40 21.7 nC0.034 at VGS = - 4.5 V - 7.2 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS

 ..2. Size:847K  cn vbsemi
si4909dy.pdf

SI4909DY SI4909DY

SI4909DYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1

 9.1. Size:240K  vishay
si4904dy.pdf

SI4909DY SI4909DY

Si4904DYVishay SiliconixDual N-Channel 40-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.016 at VGS = 10 V 8 TrenchFET Power MOSFET40 560.019 at VGS = 4.5 V 100 % Rg Tested8 UIS TestedAPPLICATIONS CCFL InverterSO-8 D1 D2S D 1 1 1 8 G 1 2 D 1 7 S D 2 2 3

 9.2. Size:259K  vishay
si4906dy.pdf

SI4909DY SI4909DY

Si4906DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = 10 V 6.6 TrenchFET Power MOSFETN-Channel 40 6.6 100 % Rg and UIS Tested0.050 at VGS = 4.5 V 5.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS CCFL Inverter

 9.3. Size:231K  vishay
si4900dy.pdf

SI4909DY SI4909DY

Si4900DYVishay SiliconixDual N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFET60 13 nC0.072 at VGS = 4.5 V 4.7APPLICATIONS LCD TV CCFL InverterSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4 D25G1 G2To

 9.4. Size:239K  vishay
si4908dy.pdf

SI4909DY SI4909DY

Si4908DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.060 at VGS = 10 V 5.0 TrenchFET Power MOSFET40 5.6 100 % Rg Tested0.070 at VGS = 4.5 V 4.7APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1 G2G2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top