SI4936CDY Datasheet. Specs and Replacement

Type Designator: SI4936CDY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO-8

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SI4936CDY datasheet

 ..1. Size:251K  vishay
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SI4936CDY

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1 ... See More ⇒

 6.1. Size:249K  vishay
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SI4936CDY

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1 ... See More ⇒

 8.1. Size:238K  vishay
si4936ad.pdf pdf_icon

SI4936CDY

Si4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET 30 0.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 G1 G2 Top View S1 S2 ... See More ⇒

 8.2. Size:235K  vishay
si4936bd.pdf pdf_icon

SI4936CDY

Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = 10 V 6.9 TrenchFET Power MOSFET 30 4.5 nC Compliant to RoHS Directive 2002/95/EC 0.051 at VGS = 4.5 V 5.7 APPLICATIONS Low Current DC/DC Conversion Notebook Syste... See More ⇒

Detailed specifications: SI4896DY, SI4904DY, SI4909DY, SI4913DY, SI4914BDY, SI4916DY, SI4925DDY, SI4931DY, SI2302, SI4943CDY, SI4946BEY, SI4948BEY, SI4992EY, SI5401DC, SI5402BDC, SI5402DC, SI5403DC

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