All MOSFET. SI4936CDY Datasheet

 

SI4936CDY Datasheet and Replacement


   Type Designator: SI4936CDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO-8

 SI4936CDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4936CDY Datasheet (PDF)

 ..1. Size:251K  vishay
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SI4936CDY

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1 ... See More ⇒

 6.1. Size:249K  vishay
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SI4936CDY

New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V TrenchFET Power MOSFET 5.8 30 2.8 nC 0.050 at VGS = 4.5 V 5.5 APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 D1 D2 S1 D1 ... See More ⇒

 8.1. Size:238K  vishay
 si4936ad.pdf pdf_icon

SI4936CDY

Si4936ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.036 at VGS = 10 V 5.9 TrenchFET Power MOSFET 30 0.053 at VGS = 4.5 V 4.9 Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 G1 G2 Top View S1 S2 ... See More ⇒

 8.2. Size:235K  vishay
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SI4936CDY

Si4936BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = 10 V 6.9 TrenchFET Power MOSFET 30 4.5 nC Compliant to RoHS Directive 2002/95/EC 0.051 at VGS = 4.5 V 5.7 APPLICATIONS Low Current DC/DC Conversion Notebook Syste... See More ⇒

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Datasheet: SI4896DY , SI4904DY , SI4909DY , SI4913DY , SI4914BDY , SI4916DY , SI4925DDY , SI4931DY , SI2302 , SI4943CDY , SI4946BEY , SI4948BEY , SI4992EY , SI5401DC , SI5402BDC , SI5402DC , SI5403DC .

Keywords - SI4936CDY MOSFET datasheet

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