All MOSFET. SI4992EY Datasheet

 

SI4992EY Datasheet and Replacement


   Type Designator: SI4992EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SO-8

 SI4992EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4992EY Datasheet (PDF)

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SI4992EY

Si4992EY Vishay Siliconix Dual N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.048 at VGS = 10 V 4.8 75 TrenchFET Power MOSFETs 0.062 at VGS = 4.5 V 4.2 175 C Maximum Junction Temperature High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC D1 D2 ... See More ⇒

Datasheet: SI4914BDY , SI4916DY , SI4925DDY , SI4931DY , SI4936CDY , SI4943CDY , SI4946BEY , SI4948BEY , IRF520 , SI5401DC , SI5402BDC , SI5402DC , SI5403DC , SI5404BDC , SI5406CDC , SI5406DC , SI5410DU .

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