SI4992EY Datasheet. Specs and Replacement
Type Designator: SI4992EY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SO-8
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SI4992EY datasheet
si4992ey.pdf
Si4992EY Vishay Siliconix Dual N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.048 at VGS = 10 V 4.8 75 TrenchFET Power MOSFETs 0.062 at VGS = 4.5 V 4.2 175 C Maximum Junction Temperature High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC D1 D2 ... See More ⇒
Detailed specifications: SI4914BDY, SI4916DY, SI4925DDY, SI4931DY, SI4936CDY, SI4943CDY, SI4946BEY, SI4948BEY, IRF520, SI5401DC, SI5402BDC, SI5402DC, SI5403DC, SI5404BDC, SI5406CDC, SI5406DC, SI5410DU
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