SI5410DU Datasheet. Specs and Replacement

Type Designator: SI5410DU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: POWERPAK

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SI5410DU datasheet

 ..1. Size:148K  vishay
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SI5410DU

New Product Si5410DU Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 12 New Thermally Enhanced PowerPAK RoHS 40 10 nC 0.021 at VGS = 4.5 V 12 COMPLIANT ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance ... See More ⇒

 9.1. Size:123K  vishay
si5414dc.pdf pdf_icon

SI5410DU

New Product Si5414DC Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.017 at VGS = 4.5 V 6 20 12.5 nC 100 % Rg Tested 0.022 at VGS = 2.5 V 6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches 1206-8... See More ⇒

 9.2. Size:148K  vishay
si5418du.pdf pdf_icon

SI5410DU

New Product Si5418DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0145 at VGS = 10 V 12 RoHS 30 9.5 nC New Thermally Enhanced PowerPAK 0.0185 at VGS = 4.5 V 12 COMPLIANT ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resista... See More ⇒

 9.3. Size:164K  vishay
si5415aedu.pdf pdf_icon

SI5410DU

Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package 0.0096 at VGS = - 4.5 V - 25 - Small Footprint Area - 20 0.0132 at VGS = - 2.5 V - 25 43 nC - Low On-Resistance 0.0220 at VGS = - 1.8 V - 7 100 % Rg and UIS T... See More ⇒

Detailed specifications: SI4992EY, SI5401DC, SI5402BDC, SI5402DC, SI5403DC, SI5404BDC, SI5406CDC, SI5406DC, AO3400A, SI5411EDU, SI5414DC, SI5415AEDU, SI5418DU, SI5419DU, SI5424DC, SI5429DU, SI5432DC

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