SI5410DU - параметры транзистора MOSFET, его аналоги, datasheet

SI5410DU Datasheet (PDF)

..1. Size:148K vishay
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New ProductSi5410DUVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 12 New Thermally Enhanced PowerPAKRoHS40 10 nC0.021 at VGS = 4.5 V 12 COMPLIANTChipFET Package- Small Footprint AreaPowerPAK ChipFET Single- Low On-Resistance

9.1. Size:123K vishay
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New ProductSi5414DCVishay Siliconix N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.017 at VGS = 4.5 V 620 12.5 nC 100 % Rg Tested0.022 at VGS = 2.5 V 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches1206-8

9.2. Size:148K vishay
si5418du.pdf pdf_icon

New ProductSi5418DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0145 at VGS = 10 V 12RoHS30 9.5 nC New Thermally Enhanced PowerPAK0.0185 at VGS = 4.5 V 12COMPLIANTChipFET Package- Small Footprint Area PowerPAK ChipFET Single- Low On-Resista

9.3. Size:164K vishay
si5415aedu.pdf pdf_icon

Si5415AEDUwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package0.0096 at VGS = - 4.5 V - 25- Small Footprint Area- 20 0.0132 at VGS = - 2.5 V - 25 43 nC- Low On-Resistance0.0220 at VGS = - 1.8 V - 7 100 % Rg and UIS T