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SI5429DU Spec and Replacement


   Type Designator: SI5429DU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERPAK

 SI5429DU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5429DU Specs

 ..1. Size:166K  vishay
 si5429du.pdf pdf_icon

SI5429DU

Si5429DU Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.015 at VGS = - 10 V - 12a - 30 20 nC ChipFET Package 0.022 at VGS = - 4.5 V - 12a - Small Footprint Area, Thin 0.8 mm Profile - Low On-Resistance 100 % Rg Tested Material categoriz... See More ⇒

 9.1. Size:235K  vishay
 si5424dc.pdf pdf_icon

SI5429DU

Si5424DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.024 at VGS = 10 V 6 30 11 nC TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 6 APPLICATIONS ChipFET 1206-8 Load Switch - Notebook PC 1 D D D D D D Marking Code D G AF XXX Lot Traceability... See More ⇒

Detailed specifications: SI5406DC , SI5410DU , SI5411EDU , SI5414DC , SI5415AEDU , SI5418DU , SI5419DU , SI5424DC , IRF830 , SI5432DC , SI5433BDC , SI5435BDC , SI5440DC , SI5441BDC , SI5441DC , SI5442DU , SI5443DC .

History: QS8K21 | BL3N100E-U | BL3N100E-A | IXFP12N50PM

Keywords - SI5429DU MOSFET specs

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