All MOSFET. SI5429DU Datasheet

 

SI5429DU Datasheet and Replacement


   Type Designator: SI5429DU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERPAK
 

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SI5429DU Datasheet (PDF)

 ..1. Size:166K  vishay
 si5429du.pdf pdf_icon

SI5429DU

Si5429DUVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK0.015 at VGS = - 10 V - 12a- 30 20 nC ChipFET Package0.022 at VGS = - 4.5 V - 12a- Small Footprint Area, Thin 0.8 mm Profile- Low On-Resistance 100 % Rg Tested Material categoriz

 9.1. Size:235K  vishay
 si5424dc.pdf pdf_icon

SI5429DU

Si5424DCVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.024 at VGS = 10 V 630 11 nC TrenchFET Power MOSFET0.030 at VGS = 4.5 V 6APPLICATIONSChipFET 1206-8 Load Switch- Notebook PC1DDD DD DMarking CodeD GAF XXXLot Traceability

Datasheet: SI5406DC , SI5410DU , SI5411EDU , SI5414DC , SI5415AEDU , SI5418DU , SI5419DU , SI5424DC , IRF1405 , SI5432DC , SI5433BDC , SI5435BDC , SI5440DC , SI5441BDC , SI5441DC , SI5442DU , SI5443DC .

History: SI5853DDC

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