SI5429DU Datasheet. Specs and Replacement
Type Designator: SI5429DU 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: POWERPAK
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SI5429DU datasheet
si5429du.pdf
Si5429DU Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.015 at VGS = - 10 V - 12a - 30 20 nC ChipFET Package 0.022 at VGS = - 4.5 V - 12a - Small Footprint Area, Thin 0.8 mm Profile - Low On-Resistance 100 % Rg Tested Material categoriz... See More ⇒
si5424dc.pdf
Si5424DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.024 at VGS = 10 V 6 30 11 nC TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 6 APPLICATIONS ChipFET 1206-8 Load Switch - Notebook PC 1 D D D D D D Marking Code D G AF XXX Lot Traceability... See More ⇒
Detailed specifications: SI5406DC, SI5410DU, SI5411EDU, SI5414DC, SI5415AEDU, SI5418DU, SI5419DU, SI5424DC, IRF830, SI5432DC, SI5433BDC, SI5435BDC, SI5440DC, SI5441BDC, SI5441DC, SI5442DU, SI5443DC
Keywords - SI5429DU MOSFET specs
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