All MOSFET. SI5475DDC Datasheet

 

SI5475DDC Datasheet and Replacement


   Type Designator: SI5475DDC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: 1206-8
      - MOSFET Cross-Reference Search

 

SI5475DDC Datasheet (PDF)

 ..1. Size:213K  vishay
 si5475ddc.pdf pdf_icon

SI5475DDC

New ProductSi5475DDCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.032 at VGS = - 4.5 V - 6aRoHS0.040 at VGS = - 2.5 V - 12- 6a 20 nCCOMPLIANTAPPLICATIONS0.052 at VGS = - 1.8 V - 6a Load Switch for Portable Devices1206-8 ChipFET1 SDD DGD D

 6.1. Size:209K  vishay
 si5475dd.pdf pdf_icon

SI5475DDC

New ProductSi5475DDCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.032 at VGS = - 4.5 V - 6aRoHS0.040 at VGS = - 2.5 V - 12- 6a 20 nCCOMPLIANTAPPLICATIONS0.052 at VGS = - 1.8 V - 6a Load Switch for Portable Devices1206-8 ChipFET1 SDD DGD D

 7.1. Size:224K  vishay
 si5475dc.pdf pdf_icon

SI5475DDC

Si5475DCVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.031 at VGS = - 4.5 V - 7.6 TrenchFET Power MOSFETs0.041 at VGS = - 2.5 V 1.8 V Rated- 12 - 6.6 Compliant to RoHS Directive 2002/95/EC0.054 at VGS = - 1.8 V - 5.81206-8 ChipFETS1DD D

 8.1. Size:233K  vishay
 si5475bdc.pdf pdf_icon

SI5475DDC

Si5475BDCVishay SiliconixP-Channel 12-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) () Halogen-free According to IEC 61249-2-21 ID (A)a Qg (Typ.)Available0.028 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET: 1.8 V Rated- 12 0.039 at VGS = - 2.5V - 6 15.5 nC0.054 at VGS = - 1.8 V - 61206-8 ChipFET S 1 D G D D D D Marking Code D G BN XXX

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History: VBNC1303 | IRFS4010PBF

Keywords - SI5475DDC MOSFET datasheet

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