All MOSFET. SI5482DU Datasheet

 

SI5482DU Datasheet and Replacement


   Type Designator: SI5482DU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 11.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERPAK
      - MOSFET Cross-Reference Search

 

SI5482DU Datasheet (PDF)

 ..1. Size:144K  vishay
 si5482du.pdf pdf_icon

SI5482DU

Si5482DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 12 New Thermally Enhanced PowerPAKRoHS30 16 nC0.0175 at VGS = 4.5 V 12 COMPLIANTChipFET Package- Small Footprint Area- Low On-ResistancePowerPAK ChipFET Single- Thin 0.8 m

 9.1. Size:167K  vishay
 si5486du.pdf pdf_icon

SI5482DU

Si5486DUVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 4.5 V New Thermally Enhanced PowerPAK12RoHSChipFET PackageCOMPLIANT0.017 at VGS = 2.5 V 20 21 nC12- Small Footprint Area0.021 at VGS = 1.8 V - Low On-Resistance12- Thin 0.8 m

 9.2. Size:166K  vishay
 si5480du.pdf pdf_icon

SI5482DU

Si5480DUVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.016 at VGS = 10 V 12 New Thermally Enhanced PowerPAKRoHS30 11 nC0.022 at VGS = 4.5 V 12 ChipFET PackageCOMPLIANT- Small Footprint Area- Low On-ResistancePowerPAK ChipFET Single- Thin 0.8 mm

 9.3. Size:150K  vishay
 si5481du.pdf pdf_icon

SI5482DU

New ProductSi5481DUVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = - 4.5 V - 12a New thermally Enhanced PowerPAKRoHSCOMPLIANTChipFET Package- 20 0.029 at VGS = - 2.5 V - 12a 20 nC- Small Footprint Area0.041 at VGS = - 1.8 V - 12a- Low On-R

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Keywords - SI5482DU MOSFET datasheet

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