SI5499DC PDF and Equivalents Search

 

SI5499DC Specs and Replacement


   Type Designator: SI5499DC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: 1206-8
 

 SI5499DC substitution

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SI5499DC datasheet

 ..1. Size:105K  vishay
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SI5499DC

Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Available 0.036 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET 1.5 V Rated 0.045 at VGS = - 2.5 V - 6 Ultra-Low On-Resistance - 8 14 nC 0.056 at VGS = - 1.8 V - 6 APPLICATIONS 0.077 at VGS = - 1.5 V - 6 ... See More ⇒

Detailed specifications: SI5476DU , SI5479DU , SI5480DU , SI5481DU , SI5482DU , SI5484DU , SI5485DU , SI5486DU , AO3400 , SI5504BDC , SI5513CDC , SI5515CDC , SI5517DU , SI5853 , SI5853CDC , SI5853DDC , SI5855CDC .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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