All MOSFET. SI5499DC Datasheet

 

SI5499DC Datasheet and Replacement


   Type Designator: SI5499DC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: 1206-8
 
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SI5499DC Datasheet (PDF)

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SI5499DC

Si5499DCVishay SiliconixP-Channel 1.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Available0.036 at VGS = - 4.5 V - 6 TrenchFET Power MOSFET: 1.5 V Rated0.045 at VGS = - 2.5 V - 6 Ultra-Low On-Resistance- 8 14 nC0.056 at VGS = - 1.8 V - 6APPLICATIONS0.077 at VGS = - 1.5 V - 6

Datasheet: SI5476DU , SI5479DU , SI5480DU , SI5481DU , SI5482DU , SI5484DU , SI5485DU , SI5486DU , IRF3710 , SI5504BDC , SI5513CDC , SI5515CDC , SI5517DU , SI5853 , SI5853CDC , SI5853DDC , SI5855CDC .

History: 2SJ449 | IXTM14N80

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