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SI5517DU Spec and Replacement


   Type Designator: SI5517DU
   Marking Code: EA*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: POWERPAK

 SI5517DU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5517DU Specs

 ..1. Size:178K  vishay
 si5517du.pdf pdf_icon

SI5517DU

Si5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS RDS(on) ( ) ID (A)a Qg TrenchFET Power MOSFETs 0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAK N-Channel 20 0.045 at VGS = 2.5 V 6 6 nc RoHS ChipFET Package COMPLIANT 0.055 at VGS = 1.8 V 6 - Small Footprint Area 0.072 at VGS = - 4.5 V - 6 - Low O... See More ⇒

 9.1. Size:153K  vishay
 si5519du.pdf pdf_icon

SI5517DU

Si5519DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFETs 0.036 at VGS = 4.5 V 6.0 RoHS N-Channel 20 5.4 nC 0.063 at VGS = 2.5 V COMPLIANT 6.0 APPLICATIONS 0.064 at VGS = - 4.5 V - 6.0 Portable DC-DC Applications P-Channel - 20 6.0 nC 0.095 at VGS = - 2... See More ⇒

 9.2. Size:148K  vishay
 si5511dc.pdf pdf_icon

SI5517DU

Si5511DC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.055 at VGS = 4.5 V 4a,g TrenchFET Power MOSFETs N-Channel 30 4.2 nC 0.090 at VGS = 2.5 V 4a,g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.6a P-Channel - 30 2.8... See More ⇒

 9.3. Size:258K  vishay
 si5515dc.pdf pdf_icon

SI5517DU

Si5515DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs 0.045 at VGS = 2.5 V N-Channel 20 5.6 Ultra Low RDS(on) and Excellent Power 0.052 at VGS = 1.8 V 5.2 Handling In Compact Footprint 0.086 at VGS = -... See More ⇒

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Detailed specifications: SI5482DU , SI5484DU , SI5485DU , SI5486DU , SI5499DC , SI5504BDC , SI5513CDC , SI5515CDC , AON6414A , SI5853 , SI5853CDC , SI5853DDC , SI5855CDC , SI5857DU , SI5858DU , SI5902BDC , SI5904DC .

Keywords - SI5517DU MOSFET specs

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