All MOSFET. SI5517DU Datasheet

 

SI5517DU Datasheet and Replacement


   Type Designator: SI5517DU
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: POWERPAK
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SI5517DU Datasheet (PDF)

 ..1. Size:178K  vishay
 si5517du.pdf pdf_icon

SI5517DU

Si5517DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS RDS(on) ()ID (A)a Qg TrenchFET Power MOSFETs0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAKN-Channel 20 0.045 at VGS = 2.5 V 6 6 nc RoHSChipFET Package COMPLIANT0.055 at VGS = 1.8 V 6- Small Footprint Area0.072 at VGS = - 4.5 V - 6- Low O

 9.1. Size:153K  vishay
 si5519du.pdf pdf_icon

SI5517DU

Si5519DUVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETs0.036 at VGS = 4.5 V 6.0RoHSN-Channel 20 5.4 nC0.063 at VGS = 2.5 V COMPLIANT6.0APPLICATIONS0.064 at VGS = - 4.5 V - 6.0 Portable DC-DC ApplicationsP-Channel - 20 6.0 nC0.095 at VGS = - 2

 9.2. Size:148K  vishay
 si5511dc.pdf pdf_icon

SI5517DU

Si5511DCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.055 at VGS = 4.5 V 4a,g TrenchFET Power MOSFETsN-Channel 30 4.2 nC0.090 at VGS = 2.5 V 4a,g Compliant to RoHS Directive 2002/95/EC0.150 at VGS = - 4.5 V - 3.6aP-Channel - 30 2.8

 9.3. Size:258K  vishay
 si5515dc.pdf pdf_icon

SI5517DU

Si5515DCVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs0.045 at VGS = 2.5 V N-Channel 20 5.6 Ultra Low RDS(on) and Excellent Power 0.052 at VGS = 1.8 V 5.2Handling In Compact Footprint0.086 at VGS = -

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History: VBNC1303 | IRFS4010PBF

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