SI5517DU - Даташиты. Аналоги. Основные параметры

Si5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS RDS(on) ( ) ID (A)a Qg TrenchFET Power MOSFETs 0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAK N-Channel 20 0.045 at VGS = 2.5 V 6 6 nc RoHS ChipFET Package COMPLIANT 0.055 at VGS = 1.8 V 6 - Small Footprint Area 0.072 at VGS = - 4.5 V - 6 - Low O

Si5519DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFETs 0.036 at VGS = 4.5 V 6.0 RoHS N-Channel 20 5.4 nC 0.063 at VGS = 2.5 V COMPLIANT 6.0 APPLICATIONS 0.064 at VGS = - 4.5 V - 6.0 Portable DC-DC Applications P-Channel - 20 6.0 nC 0.095 at VGS = - 2

Si5511DC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.055 at VGS = 4.5 V 4a,g TrenchFET Power MOSFETs N-Channel 30 4.2 nC 0.090 at VGS = 2.5 V 4a,g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.6a P-Channel - 30 2.8

Si5515DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs 0.045 at VGS = 2.5 V N-Channel 20 5.6 Ultra Low RDS(on) and Excellent Power 0.052 at VGS = 1.8 V 5.2 Handling In Compact Footprint 0.086 at VGS = -

Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.055 at VGS = 4.5 V TrenchFET Power MOSFETs 4g N-Channel 20 2.6 nC 100 % Rg Tested 0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.7 P-Ch

Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.075 at VGS = 4.5 V 4.2 TrenchFET Power MOSFETs N-Channel 20 4 0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC 0.155 at VGS = - 4.5 V - 2.9 P-Channel - 20 3 0.260 at VGS

Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.055 at VGS = 4.5 V TrenchFET Power MOSFETs 4g N-Channel 20 2.6 nC 100 % Rg Tested 0.085 at VGS = 2.5 V 4g Compliant to RoHS Directive 2002/95/EC 0.150 at VGS = - 4.5 V - 3.7 P-Ch

Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = 4.5 V 4g TrenchFET Power MOSFETs 0.041 at VGS = 2.5 V N-Channel 20 100 % Rg Tested 4g 6.5 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 4g 0.100

Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = 4.5 V 4g TrenchFET Power MOSFETs 0.041 at VGS = 2.5 V N-Channel 20 100 % Rg Tested 4g 6.5 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 4g 0.100

SMD Type MOSFET Complementary Enhancement MOSFET SI5513CD (KI5513CD) Features N-Channel VDS=20V ID=4A(VGS=4.5V) RDS(ON) 35m (VGS = 4.5V) RDS(ON) 50m (VGS = 2.5V) RDS(ON) 90m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A(VGS=-4.5V) RDS(ON) 85m (VGS =-4.5V) RDS(ON) 115m (VGS =-2.5V) RDS(ON) 150m (VGS =-1.8V) Absolute Maximum Rating