SI5853CDC MOSFET Datasheet: P-Ch, 20V, 2.9A. Full specification with pinout and replacement list

SI5853CDC Specs and Replacement

   Type Designator: SI5853CDC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: 1206-8

SI5853CDC substitution

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SI5853CDC datasheet

..1. Size:130K vishay
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Si5853CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.104 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.144 at VGS = - 2.5 V - 3.6 4.2 nC Compliant to RoHS Directive 2002/95/EC 0.205 at VGS = - 1.8 V... See More ⇒

8.1. Size:172K vishay
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Si5853DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.110 at VGS = - 4.5 V - 3.6 LITTLE FOOT Plus 0.160 at VGS = - 2.5 V - 20 - 3.0 Compliant to RoHS Directive 2002/95/EC 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY ... See More ⇒

8.2. Size:254K vishay
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Shen zhen TuoFeng Semiconductor Techonlogy co., LTD SI5853 P-Channel Enhancement Mode MOSFET with Schottky Diode FEATURE APPLICATIONS MOSFET Battery Powered System -20V/-3.5A, RDS(ON) 110m @VGS = -4.5V Notebook Power Management -20V/-2.4A, RDS(ON) 160m @VGS = -2.5V Cell Phone SCHOTTKY VKA = 20V, VF=0.4V(Typ.)@ IF = 0.5A Full RoHS compliance ... See More ⇒

8.3. Size:190K vishay
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Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC 0.188 at VGS = - 1.8 V... See More ⇒