SI5908DC
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5908DC
Marking Code: CC*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 36
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: 1206-8
SI5908DC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5908DC
Datasheet (PDF)
..1. Size:235K vishay
si5908dc.pdf 
Si5908DCVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs Ultra Low RDS(on) and Excellent Power0.045 at VGS = 2.5 V 20 5.6Handling in Compact Footprint0.052 at VGS = 1.8 V 5.2 Compliant to RoHS Direct
9.1. Size:112K vishay
si5902dc.pdf
Si5902DCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.930 TrenchFET Power MOSFETs0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D21S1D1 G1D1 S2G1 G2D2 G2Marking CodeD2
9.2. Size:223K vishay
si5904dc.pdf
Si5904DCVishay SiliconixDual N-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.075 at VGS = 4.5 V 4.220 TrenchFET Power MOSFET: 2.5 V Rated0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFET1D1 D2S1D1 G1D1 S2D2 G2Marking Code
9.3. Size:113K vishay
si5905bd.pdf
Si5905BDCVishay SiliconixDual P-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 4a TrenchFET Power MOSFETs- 8 0.117 at VGS = - 2.5 V - 4a 4 nC Compliant to RoHS Directive 2002/95/EC0.170 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch f
9.4. Size:242K vishay
si5902bdc.pdf
Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET
9.5. Size:219K vishay
si5903dc.pdf
Si5903DCVishay SiliconixDual P-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.155 at VGS = - 4.5 V 2.9 TrenchFET Power MOSFETs0.180 at VGS = - 3.6 V - 20 2.7 Compliant to RoHS Directive 2002/95/EC0.260 at VGS = - 2.5 V 2.21206-8 ChipFETS1 S21S1D1 G1
9.6. Size:159K vishay
si5906du.pdf
New ProductSi5906DUVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V TrenchFET Power MOSFET630 8 nC New Thermally Enhanced PowerPAK0.040 at VGS = 4.5 V 6ChipFET Package- Small Footprint Area- Low On-Resistance-
9.7. Size:112K vishay
si5902bd si5902bdc.pdf
Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET
9.8. Size:147K vishay
si5504bdc si5904bd.pdf
Si5504BDCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFETsN-Channel 30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC0.140 at VGS = - 10 V - 3.7P-Channel - 30 2.2 nC APPLICA
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