Справочник MOSFET. SI5908DC

 

SI5908DC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI5908DC
   Маркировка: CC*
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5 nC
   trⓘ - Время нарастания: 36 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: 1206-8

 Аналог (замена) для SI5908DC

 

 

SI5908DC Datasheet (PDF)

 ..1. Size:235K  vishay
 si5908dc.pdf

SI5908DC SI5908DC

Si5908DCVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs Ultra Low RDS(on) and Excellent Power0.045 at VGS = 2.5 V 20 5.6Handling in Compact Footprint0.052 at VGS = 1.8 V 5.2 Compliant to RoHS Direct

 9.1. Size:112K  vishay
 si5902dc.pdf

SI5908DC SI5908DC

Si5902DCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.930 TrenchFET Power MOSFETs0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D21S1D1 G1D1 S2G1 G2D2 G2Marking CodeD2

 9.2. Size:223K  vishay
 si5904dc.pdf

SI5908DC SI5908DC

Si5904DCVishay SiliconixDual N-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.075 at VGS = 4.5 V 4.220 TrenchFET Power MOSFET: 2.5 V Rated0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFET1D1 D2S1D1 G1D1 S2D2 G2Marking Code

 9.3. Size:113K  vishay
 si5905bd.pdf

SI5908DC SI5908DC

Si5905BDCVishay SiliconixDual P-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 4a TrenchFET Power MOSFETs- 8 0.117 at VGS = - 2.5 V - 4a 4 nC Compliant to RoHS Directive 2002/95/EC0.170 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch f

 9.4. Size:242K  vishay
 si5902bdc.pdf

SI5908DC SI5908DC

Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET

 9.5. Size:219K  vishay
 si5903dc.pdf

SI5908DC SI5908DC

Si5903DCVishay SiliconixDual P-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.155 at VGS = - 4.5 V 2.9 TrenchFET Power MOSFETs0.180 at VGS = - 3.6 V - 20 2.7 Compliant to RoHS Directive 2002/95/EC0.260 at VGS = - 2.5 V 2.21206-8 ChipFETS1 S21S1D1 G1

 9.6. Size:159K  vishay
 si5906du.pdf

SI5908DC SI5908DC

New ProductSi5906DUVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V TrenchFET Power MOSFET630 8 nC New Thermally Enhanced PowerPAK0.040 at VGS = 4.5 V 6ChipFET Package- Small Footprint Area- Low On-Resistance-

 9.7. Size:112K  vishay
 si5902bd si5902bdc.pdf

SI5908DC SI5908DC

Si5902BDCVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFET30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applications1206-8 ChipFET

 9.8. Size:147K  vishay
 si5504bdc si5904bd.pdf

SI5908DC SI5908DC

Si5504BDCVishay SiliconixN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ)Definition0.065 at VGS = 10 V 4a TrenchFET Power MOSFETsN-Channel 30 2 nC0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC0.140 at VGS = - 10 V - 3.7P-Channel - 30 2.2 nC APPLICA

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