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SI5933CDC Spec and Replacement


   Type Designator: SI5933CDC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.144 Ohm
   Package: 1206-8

 SI5933CDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5933CDC Specs

 ..1. Size:242K  vishay
 si5933cdc.pdf pdf_icon

SI5933CDC

Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET 0.180 at VGS = - 2.5 V - 3.0 4.1 nC - 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 0.222 at VGS = - 1.8 V - 3.0 APPLICATI... See More ⇒

 6.1. Size:238K  vishay
 si5933cd.pdf pdf_icon

SI5933CDC

Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET 0.180 at VGS = - 2.5 V - 3.0 4.1 nC - 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 0.222 at VGS = - 1.8 V - 3.0 APPLICATI... See More ⇒

 9.1. Size:130K  vishay
 si5938du.pdf pdf_icon

SI5933CDC

Si5938DU Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAK RoHS 0.045 at VGS = 2.5 V 20 6 6 nC ChipFET Package COMPLIANT - Small Footprint Area 0.055 at VGS = 1.8 V 6 - Low On-Resistance PowerPAK C... See More ⇒

 9.2. Size:151K  vishay
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SI5933CDC

New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package 0.030 at VGS = 10 V 6 - Small Footprint Area 30 3.5 nC - Low On-Resistance 0.040 at VGS = 4.5 V 6 - Thin 0.8 mm Profile 100 % Rg Tested Mater... See More ⇒

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Detailed specifications: SI5855CDC , SI5857DU , SI5858DU , SI5902BDC , SI5904DC , SI5906DU , SI5908DC , SI5913DC , 2N7002 , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ .

History: SI5936DU

Keywords - SI5933CDC MOSFET specs

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