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SI5980DU Spec and Replacement


   Type Designator: SI5980DU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.567 Ohm
   Package: POWERPAK

 SI5980DU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5980DU Specs

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SI5980DU

Si5980DU Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.567 at VGS = 10 V 100 2.2 nC 2.5 TrenchFET Power MOSFET New Thermally Enhanced PowerPAK ChipFET Package - Small Footprint Area PowerPAK ChipFET Dual - Low On-Resistance - Thin 0.8... See More ⇒

Detailed specifications: SI5904DC , SI5906DU , SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , AO3401 , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ .

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