All MOSFET. SI5980DU Datasheet

 

SI5980DU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI5980DU
   Marking Code: CE*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.567 Ohm
   Package: POWERPAK

 SI5980DU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5980DU Datasheet (PDF)

 ..1. Size:112K  vishay
 si5980du.pdf

SI5980DU SI5980DU

Si5980DUVishay SiliconixDual N-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.567 at VGS = 10 V 100 2.2 nC2.5 TrenchFET Power MOSFET New Thermally Enhanced PowerPAKChipFET Package- Small Footprint AreaPowerPAK ChipFET Dual- Low On-Resistance- Thin 0.8

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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