All MOSFET. SI5980DU Datasheet

 

SI5980DU Datasheet and Replacement


   Type Designator: SI5980DU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.567 Ohm
   Package: POWERPAK
 

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SI5980DU Datasheet (PDF)

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SI5980DU

Si5980DUVishay SiliconixDual N-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.567 at VGS = 10 V 100 2.2 nC2.5 TrenchFET Power MOSFET New Thermally Enhanced PowerPAKChipFET Package- Small Footprint AreaPowerPAK ChipFET Dual- Low On-Resistance- Thin 0.8

Datasheet: SI5904DC , SI5906DU , SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , AO3400 , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ .

History: NCEP040N85G | SRT10N022HTLTR-G

Keywords - SI5980DU MOSFET datasheet

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