SI5980DU Datasheet. Specs and Replacement

Type Designator: SI5980DU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.567 Ohm

Package: POWERPAK

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SI5980DU datasheet

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SI5980DU

Si5980DU Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.567 at VGS = 10 V 100 2.2 nC 2.5 TrenchFET Power MOSFET New Thermally Enhanced PowerPAK ChipFET Package - Small Footprint Area PowerPAK ChipFET Dual - Low On-Resistance - Thin 0.8... See More ⇒

Detailed specifications: SI5904DC, SI5906DU, SI5908DC, SI5913DC, SI5933CDC, SI5935CDC, SI5936DU, SI5944DU, AO3401, SI5997DU, SI5999EDU, SI6404DQ, SI6410DQ, SI6413DQ, SI6415DQ, SI6423DQ, SI6433BDQ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.