All MOSFET. SI5999EDU Datasheet

 

SI5999EDU Datasheet and Replacement


   Type Designator: SI5999EDU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: POWERPAK
 

 SI5999EDU substitution

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SI5999EDU Datasheet (PDF)

 ..1. Size:170K  vishay
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SI5999EDU

Si5999EDUVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 6.9 nC New Thermally Enhanced PowerPAK0.096 at VGS = - 2.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance

 6.1. Size:170K  vishay
 si5999ed.pdf pdf_icon

SI5999EDU

Si5999EDUVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 6.9 nC New Thermally Enhanced PowerPAK0.096 at VGS = - 2.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance

 9.1. Size:167K  vishay
 si5997du.pdf pdf_icon

SI5999EDU

Si5997DUVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.054 at VGS = - 10 V - 6a TrenchFET Power MOSFET- 30 4.8 nC New Thermally Enhanced PowerPAK0.088 at VGS = - 4.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance-

Datasheet: SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , 8205A , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ .

History: SSF90R900S2

Keywords - SI5999EDU MOSFET datasheet

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