SI5999EDU Datasheet. Specs and Replacement

Type Designator: SI5999EDU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm

Package: POWERPAK

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SI5999EDU datasheet

 ..1. Size:170K  vishay
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SI5999EDU

Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒

 6.1. Size:170K  vishay
si5999ed.pdf pdf_icon

SI5999EDU

Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒

 9.1. Size:167K  vishay
si5997du.pdf pdf_icon

SI5999EDU

Si5997DU Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.054 at VGS = - 10 V - 6a TrenchFET Power MOSFET - 30 4.8 nC New Thermally Enhanced PowerPAK 0.088 at VGS = - 4.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance -... See More ⇒

Detailed specifications: SI5908DC, SI5913DC, SI5933CDC, SI5935CDC, SI5936DU, SI5944DU, SI5980DU, SI5997DU, IRFP260, SI6404DQ, SI6410DQ, SI6413DQ, SI6415DQ, SI6423DQ, SI6433BDQ, SI6435ADQ, SI6443DQ

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