SI5999EDU Datasheet. Specs and Replacement
Type Designator: SI5999EDU 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 141 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: POWERPAK
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SI5999EDU substitution
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SI5999EDU datasheet
si5999edu.pdf
Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒
si5999ed.pdf
Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒
si5997du.pdf
Si5997DU Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.054 at VGS = - 10 V - 6a TrenchFET Power MOSFET - 30 4.8 nC New Thermally Enhanced PowerPAK 0.088 at VGS = - 4.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance -... See More ⇒
Detailed specifications: SI5908DC, SI5913DC, SI5933CDC, SI5935CDC, SI5936DU, SI5944DU, SI5980DU, SI5997DU, IRFP260, SI6404DQ, SI6410DQ, SI6413DQ, SI6415DQ, SI6423DQ, SI6433BDQ, SI6435ADQ, SI6443DQ
Keywords - SI5999EDU MOSFET specs
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History: AP10N012IN | WST2088A | AP1004CMX | WST2303 | MSW16N50 | WSR7N65F | MSU12N60F
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