SI5999EDU Spec and Replacement
Type Designator: SI5999EDU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 141 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: POWERPAK
SI5999EDU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5999EDU Specs
si5999edu.pdf
Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒
si5999ed.pdf
Si5999EDU Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET - 20 6.9 nC New Thermally Enhanced PowerPAK 0.096 at VGS = - 2.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance ... See More ⇒
si5997du.pdf
Si5997DU Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.054 at VGS = - 10 V - 6a TrenchFET Power MOSFET - 30 4.8 nC New Thermally Enhanced PowerPAK 0.088 at VGS = - 4.5 V - 6a ChipFET Package - Small Footprint Area - Low On-Resistance -... See More ⇒
Detailed specifications: SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , IRFP260 , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ .
Keywords - SI5999EDU MOSFET specs
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