SI6404DQ Spec and Replacement
Type Designator: SI6404DQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TSSOP-8
SI6404DQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI6404DQ Specs
si6404dq.pdf
Si6404DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 2.5 V Rated 0.009 at VGS = 10 V 11 30 V VDS RoHS 0.010 at VGS = 4.5 V 30 10 COMPLIANT 0.014 at VGS = 2.5 V 8.8 APPLICATIONS Battery Switch Charger Switch D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be... See More ⇒
Detailed specifications: SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , 4435 , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ .
Keywords - SI6404DQ MOSFET specs
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