SI6404DQ Datasheet and Replacement
Type Designator: SI6404DQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TSSOP-8
SI6404DQ substitution
SI6404DQ Datasheet (PDF)
si6404dq.pdf

Si6404DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 2.5 V Rated0.009 at VGS = 10 V 11 30 V VDS RoHS0.010 at VGS = 4.5 V 30 10COMPLIANT0.014 at VGS = 2.5 V 8.8APPLICATIONS Battery Switch Charger SwitchDTSSOP-8* Source Pins 2, 3, 6 and 7 must be
Datasheet: SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , AON7410 , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ .
History: BUK962R6-40E
Keywords - SI6404DQ MOSFET datasheet
SI6404DQ cross reference
SI6404DQ equivalent finder
SI6404DQ lookup
SI6404DQ substitution
SI6404DQ replacement
History: BUK962R6-40E



LIST
Last Update
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
2n3638 | tip127 datasheet | irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775