All MOSFET. SI6404DQ Datasheet

 

SI6404DQ Datasheet and Replacement


   Type Designator: SI6404DQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.08 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TSSOP-8
 

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SI6404DQ Datasheet (PDF)

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SI6404DQ

Si6404DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 2.5 V Rated0.009 at VGS = 10 V 11 30 V VDS RoHS0.010 at VGS = 4.5 V 30 10COMPLIANT0.014 at VGS = 2.5 V 8.8APPLICATIONS Battery Switch Charger SwitchDTSSOP-8* Source Pins 2, 3, 6 and 7 must be

Datasheet: SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , 2SK3568 , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ .

History: RXQ040N03 | WFY5N03

Keywords - SI6404DQ MOSFET datasheet

 SI6404DQ cross reference
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