SI6413DQ Datasheet. Specs and Replacement
Type Designator: SI6413DQ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.05 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TSSOP-8
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SI6413DQ substitution
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SI6413DQ datasheet
si6413dq.pdf
Si6413DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.010 at VGS = - 4.5 V - 8.8 RoHS 0.013 at VGS = - 2.5 V - 20 - 7.6 COMPLIANT APPLICATIONS 0.016 at VGS = - 1.8 V - 6.8 Load Switch PA Switch Charger Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 ... See More ⇒
si6415dq.pdf
Si6415DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.019 at VGS = - 10 V 6.5 Available - 30 0.030 at VGS = - 4.5 V 5.2 RoHS* COMPLIANT S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common. S S 2 7 Si6415DQ S S 3 6 G D 4 5 Top V... See More ⇒
si6410dq.pdf
Si6410DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.014 at VGS = 10 V 7.8 30 RoHS 0.021 at VGS = 4.5 V 6.3 COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 Si6410DQ S S 3 6 G D 4 5 Top View S* Ordering Information ... See More ⇒
Detailed specifications: SI5935CDC, SI5936DU, SI5944DU, SI5980DU, SI5997DU, SI5999EDU, SI6404DQ, SI6410DQ, SKD502T, SI6415DQ, SI6423DQ, SI6433BDQ, SI6435ADQ, SI6443DQ, SI6459BDQ, SI6463BDQ, SI6465DQ
Keywords - SI6413DQ MOSFET specs
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