SI6413DQ Spec and Replacement
Type Designator: SI6413DQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.05 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TSSOP-8
SI6413DQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI6413DQ Specs
si6413dq.pdf
Si6413DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.010 at VGS = - 4.5 V - 8.8 RoHS 0.013 at VGS = - 2.5 V - 20 - 7.6 COMPLIANT APPLICATIONS 0.016 at VGS = - 1.8 V - 6.8 Load Switch PA Switch Charger Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 ... See More ⇒
si6415dq.pdf
Si6415DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.019 at VGS = - 10 V 6.5 Available - 30 0.030 at VGS = - 4.5 V 5.2 RoHS* COMPLIANT S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common. S S 2 7 Si6415DQ S S 3 6 G D 4 5 Top V... See More ⇒
si6410dq.pdf
Si6410DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.014 at VGS = 10 V 7.8 30 RoHS 0.021 at VGS = 4.5 V 6.3 COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 Si6410DQ S S 3 6 G D 4 5 Top View S* Ordering Information ... See More ⇒
Detailed specifications: SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SKD502T , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ , SI6463BDQ , SI6465DQ .
Keywords - SI6413DQ MOSFET specs
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