SI6423DQ Datasheet and Replacement
Type Designator: SI6423DQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.05 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TSSOP-8
SI6423DQ substitution
SI6423DQ Datasheet (PDF)
si6423dq.pdf

Si6423DQVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET0.0085 at VGS = - 4.5 V - 9.5RoHS0.0106 at VGS = - 2.5 V - 12 - 8.5COMPLIANTAPPLICATIONS0.014 at VGS = - 1.8 V - 7.5 Load SwitchS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S
si6423dq-t1.pdf

SI6423DQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3
si6426dq.pdf

Si6426DQN-Channel 2.5-V (G-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 4.5 V "5.420200.04 @ VGS = 2.5 V "4.9DTSSOP-81 8D DDS 2 7 SSi6426DQ GS 3 6 SG 4 5 D*Source Pins 2, 3, 6, and 7Top Viewmust be tied common.S*N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Sour
Datasheet: SI5944DU , SI5980DU , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , TK10A60D , SI6433BDQ , SI6435ADQ , SI6443DQ , SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ .
History: IPN80R900P7
Keywords - SI6423DQ MOSFET datasheet
SI6423DQ cross reference
SI6423DQ equivalent finder
SI6423DQ lookup
SI6423DQ substitution
SI6423DQ replacement
History: IPN80R900P7



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