SI6433BDQ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI6433BDQ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.05
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 60
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TSSOP-8
SI6433BDQ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI6433BDQ
Datasheet (PDF)
..1. Size:204K vishay
si6433bdq.pdf 
Si6433BDQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.040 at VGS = - 4.5 V - 4.8- 12RoHS0.070 at VGS = - 2.5 V - 3.6COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7S S3 6G D4 5Top View DOrdering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free a
8.1. Size:65K vishay
si6433dq.pdf
Si6433DQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.06 @ VGS = 4.5 V "4.012120.09 @ VGS = 2.5 V "3.0S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6433DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy
9.1. Size:53K vishay
si6436dq.pdf
Si6436DQN-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.045 @ VGS = 10 V "4.430300.070 @ VGS = 4.5 V "3.5DTSSOP-81 8D DD*Source Pins 2, 3, 6 and 7 S 2 7 Smust be tied common.Si6436DQ GS 3 6 SG 4 5 DTop ViewS*N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Sourc
9.2. Size:59K vishay
si6434dq.pdf
Si6434DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V 5.630300.042 @ VGS = 4.5 V 4.5DTSSOP-8D D1 8D * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7GS S3 6G D4 5Top ViewS*Ordering Information: Si6434DQ-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C
9.3. Size:198K vishay
si6435adq.pdf
Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO
9.4. Size:864K cn vbsemi
si6435adq-t1.pdf
SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3
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